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High-Quality Factory Direct OEM VC5819THX SOD-523 350mA 150mW Schottky Diode Original manufacturer

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High-Performance OEM VC5819THX SOD-523 SMD Schottky Diode for Electronics Semiconductor Production factory

Package Structure:	Plastic Sealed Transistor
Application:	Electronic Products
Structure:	Planar
Material:	Silicon
Specification:	Schottky Barrier Diode
DC Blocking Voltage:	40V
Forward Continuous Current:	350mA

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High-Performance OEM VC5819THX SOD-523 SMD Schottky Diode for Electronics Semiconductor Production factory

SOD-523 SMD Schottky Barrier Diode 200mA VCRB520S-30B Vr 30V Factory Direct Supply Production manufacturer

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SOD-523 SMD Schottky Barrier Diode 200mA VCRB520S-30B Vr 30V Factory Direct Supply Production manufacturer

Package Structure:	Plastic Sealed Transistor
Application:	Electronic Products
Structure:	Planar
Material:	Silicon
Specification:	Schottky Barrier Diode
DC Reverse Voltage:	30V
Mean Rectifying Current:	200mA

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SOD-523 SMD Schottky Barrier Diode 200mA VCRB520S-30B Vr 30V Factory Direct Supply Production manufacturer

China Factory SOD-523 VCRB520S-30B Small Signal SMD Schottky Diode 30V 200mA Original manufacturer

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China Factory SOD-523 VCRB520S-30B Small Signal SMD Schottky Diode 30V 200mA Original manufacturer

Package Structure:	Plastic Sealed Transistor
Application:	Electronic Products
Structure:	Planar
Material:	Silicon
Specification:	Schottky Barrier Diode
DC Reverse Voltage:	30V
Mean Rectifying Current:	200mA

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China Factory SOD-523 VCRB520S-30B Small Signal SMD Schottky Diode 30V 200mA Original manufacturer

Wholesale SOD323 TVS ESD Protection Diode VCLT550-YW Electronic Components for Surge Protection

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Wholesale SOD323 TVS ESD Protection Diode VCLT550-YW Electronic Components for Surge Protection

Features:	Uni-Direction ESD Protection Diode
Model No.:	Vclt550-Yw
Package:	SOD-323
Application1:	Smart Phones
Application2:	Laptop Computers
Application3:	Portable Electronics
Feature1:	350W (8X20us) Peak Pulse Power

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Wholesale SOD323 TVS ESD Protection Diode VCLT550-YW Electronic Components for Surge Protection

Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent

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Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent

Reverse Voltage:	40V
Average Forward Rectified Current:	1A
Ifsm:	9A
Power Dissipation:	450MW
PACKAGE:	SOD-323
MODEL:	VC1N5819WSB
Specification:	A Surface Mount Schottky Barrier Diode

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Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent

SMD Schottky Barrier Diode VC1N5819WSB SOD-323 Factory Direct Support OEM Customization Semiconductor

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SMD Schottky Barrier Diode VC1N5819WSB SOD-323 Factory Direct Support OEM Customization Semiconductor

Reverse Voltage:	40V
Average Forward Rectified Current:	1A
Ifsm:	9A
Power Dissipation:	450MW
PACKAGE:	SOD-323
MODEL:	VC1N5819WSB
Specification:	A Surface Mount Schottky Barrier Diode

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SMD Schottky Barrier Diode VC1N5819WSB SOD-323 Factory Direct Support OEM Customization Semiconductor

Direct Factory SMD Switching Diode 150mA VC1N4148WB SOD-123 Fast Recovery Signal Diode Integrated Circuit

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Direct Factory SMD Switching Diode 150mA VC1N4148WB SOD-123 Fast Recovery Signal Diode Integrated Circuit

Max Forward Current:	150mA
Max Reverse Current:	1uA
Max Reverse Voltage:	75V
Type:	Silicon Epitaxial Planar Switching Diode
Specification:	Plastic surface mounted package
Package:	SOD‑123
Temperature Range:	-55~+150℃

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Direct Factory SMD Switching Diode 150mA VC1N4148WB SOD-123 Fast Recovery Signal Diode Integrated Circuit

Premium Quality SMD Fast Switching Diode Vr 75V Ifav 150mA Fetures Applications SOD123 Electronic Components

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Premium Quality SMD Fast Switching Diode Vr 75V Ifav 150mA Fetures Applications SOD123 Electronic Components

Max Forward Current:	150mA
Max Reverse Current:	1uA
Max Reverse Voltage:	75V
Type:	Silicon Epitaxial Planar Switching Diode
Specification:	Plastic surface mounted package
Package:	SOD‑123
Temperature Range:	-55~+150℃

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Premium Quality SMD Fast Switching Diode Vr 75V Ifav 150mA Fetures Applications SOD123 Electronic Components

Manufacturer SMD Schottky Diode 2A 40V VCDS24WZ SOD-123FL SKD OEM Custom Semiconductor

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Manufacturer SMD Schottky Diode 2A 40V VCDS24WZ SOD-123FL SKD OEM Custom Semiconductor

Material:	Silicon
Structure:	Surface Mount Schottky
Package Structure:	Plastic Sealed Transistor
Maximum Repetitive Peak Reverse Voltage:	40V
Peak Pulse Power:	2A
Ifsm:	50A
Maximum RMS Voltage:	28V

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Manufacturer SMD Schottky Diode 2A 40V VCDS24WZ SOD-123FL SKD OEM Custom Semiconductor

Wholesale price DFNWB3×2-08L Composite Transistor semiconductor Power Management Mosfets-Schottky

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Wholesale price DFNWB3×2-08L Composite Transistor semiconductor Power Management Mosfets-Schottky

Material:	Silicon
Package Structure:	Plastic Sealed Transistor
Application:	Electronic Products
Structure:	Planar
Package:	Dfnwb3×2-08L-B
Storage Temperature:	-55~+150℃
DC Blocking Voltage:	20V

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Wholesale price DFNWB3×2-08L Composite Transistor semiconductor Power Management Mosfets-Schottky

Manufacturing plant DFNWB2*2-6L N-MOSFET PNP Power Transistor High Semiconductor Electronic Component

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Manufacturing plant DFNWB2*2-6L N-MOSFET PNP Power Transistor High Semiconductor Electronic Component

Material:	Silicon
Package Structure:	Plastic Sealed Transistor
Mounting Method:	SMD Triode
Structure:	PNP
Package:	DFNWB2*2-6
Specification:	PNP Power Transistor with N‑MOSFET
Power Rating:	small power

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Manufacturing plant DFNWB2*2-6L N-MOSFET PNP Power Transistor High Semiconductor Electronic Component

Advanced Design VC4148K LL-34 Epitaxial Silicon Switching Diode Semiconductor Factory Wholesale Factory Supply

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Advanced Design VC4148K LL-34 Epitaxial Silicon Switching Diode Semiconductor Factory Wholesale Factory Supply

Package Structure:	Glass Sealed Transistor
Application:	Electronic Products
Material:	Silicon
Structure:	Planar
Peak Reverse Voltage:	100V
Reverse Voltage:	75 V
Average Rectified Forward Current:	200mA

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Advanced Design VC4148K LL-34 Epitaxial Silicon Switching Diode Semiconductor Factory Wholesale Factory Supply

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High Performance IFSM 0.5A VC521S6-30X 2-Pin DFNWB0603 Schottky Diode for Fast Switching Semiconductor

VRRM:
30V

VRWM:
30V

VR(RMS):
21V

IO:
100mA

IFSM:
0.5A

Pd:
100mW

RθJA:
1000℃/W

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High Performance IFSM 0.5A VC521S6-30X 2-Pin DFNWB0603 Schottky Diode for Fast Switching Semiconductor

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100mA Versatile Schottky Barrier Diode VC521S6-30X DFNWB0.6×0.3-2L for Electronic Components

VRRM:
30V

VRWM:
30V

VR(RMS):
21V

IO:
100mA

IFSM:
0.5A

Pd:
100mW

RθJA:
1000℃/W

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100mA Versatile Schottky Barrier Diode VC521S6-30X DFNWB0.6×0.3-2L for Electronic Components

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VRRM:	30V
VRWM:	30V
VR(RMS):	21V
IO:	100mA
IFSM:	0.5A
Pd:	100mW
RθJA:	1000℃/W

VRRM:	30V
VRWM:	30V
VR(RMS):	21V
IO:	100mA
IFSM:	0.5A
Pd:	100mW
RθJA:	1000℃/W

Factory Supply Bulk Price 7V Tvs Diode DFN1610-2L Package SMD Electronic Componennts semiconductor

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Factory Supply Bulk Price 7V Tvs Diode DFN1610-2L Package SMD Electronic Componennts semiconductor

Material:	Silicon
Structure:	Planar
Package Structure:	DFN Plastic SMD Packaged Tvs Diode
Working Frequency:	Wide Frequency Range for ESD and Surge Protection
Peak Pulse Power:	1600W
Peak Pulse Current:	80A
Reverse Leakage Current:	1.0uA

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Factory Supply Bulk Price 7V Tvs Diode DFN1610-2L Package SMD Electronic Componennts semiconductor

DFN0603-2L Manufacturer SMD 24V TVS Diode ESD Circuit Protection Electronic Component Semiconductor

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DFN0603-2L Manufacturer SMD 24V TVS Diode ESD Circuit Protection Electronic Component Semiconductor

Feature1:	Bidirectional configurations
Feature2:	Reverse Stand-off Voltage: 24V
Feature3:	Solid state silicon-avalanche technology
Feature4:	Low leakage current
Feature5:	LOW capacitance: CJ=0.38PF(TYP)
Feature6:	IEC61000-4-2 (ESD) ±12kV (Air)，±12kV (Contact)
Mechanical Data:	DFN0603-2L Package

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DFN0603-2L Manufacturer SMD 24V TVS Diode ESD Circuit Protection Electronic Component Semiconductor

DFN0603-2L Manufacturer SMD Tvs Diode ESD Circuit Protection Electronic Component Semiconductor

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DFN0603-2L Manufacturer SMD Tvs Diode ESD Circuit Protection Electronic Component Semiconductor

Feature1:	Bidirectional configurations
Feature2:	Reverse Stand-off Voltage: 24V
Feature3:	Solid state silicon-avalanche technology
Feature4:	Low leakage current
Feature5:	LOW capacitance: CJ=0.38PF(TYP)
Feature6:	IEC61000-4-2 (ESD) ±12kV (Air)，±12kV (Contact)
Mechanical Data:	DFN0603-2L Package

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DFN0603-2L Manufacturer SMD Tvs Diode ESD Circuit Protection Electronic Component Semiconductor

DFN0603-2L(0201) Semiconductor Manufacturer VCTB5V0P215YW ESD Diodes SMD Electronic Component Tvs Diode

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DFN0603-2L(0201) Semiconductor Manufacturer VCTB5V0P215YW ESD Diodes SMD Electronic Component Tvs Diode

Feature1:	DFN0603-2L package
Feature2:	Replacement for MLV(0201)
Feature3:	Bidirectional configurations
Feature4:	Response time is typically < 1 ns
Applications1:	Cellular phones
Applications2:	Portable devices
Applications3:	Digital cameras

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DFN0603-2L(0201) Semiconductor Manufacturer VCTB5V0P215YW ESD Diodes SMD Electronic Component Tvs Diode

Low Vf 150mW VC520S8-30F SOD-882 Schottky Barrier Diode High Frequency Electronic Components Diodes

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Low Vf 150mW VC520S8-30F SOD-882 Schottky Barrier Diode High Frequency Electronic Components Diodes

Power Dissipation:	150mW
Storage Temperature Range:	-55 to +125°C
Operating Junction Temperature:	+125°C
DC Reverse Voltage:	30v
Average Forward Current:	200mA
Peak Forward Surge Current:	0.5A
Features:	Low Forward Voltage Drop

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