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Manufacturing plant DFNWB2*2-6L N-MOSFET PNP Power Transistor High Semiconductor Electronic Component

Original factory VCMNT32D PNP Power Transistor with N-Mosfet, Factory Direct OEM SKD Integrated Circuit

Manufacturing plant DFNWB2*2-6L N-MOSFET PNP Power Transistor High Semiconductor Electronic Component

1.Compact DFNWB2*2-6L small footprint package, save PCB layout space

2.Integrated PNP Power Transistor & N-MOSFET, simplify peripheral circuit design

3.Low on-resistance, excellent switching performance for power management

4.High reliability, stable electrical performance for mass production

5.High-tech advanced chip design, low heat generation during operation

6.Factory direct supply, strict quality control with full-range testing

7.Support OEM & SKD customization to meet diverse project requirements

Model:
VCMNT32D
Brand:
Weforsemi
Code:
PNP Power Transistor with N-MOSFET

Quantity:
Material:	Silicon
Package Structure:	Plastic Sealed Transistor
Mounting Method:	SMD Triode
Structure:	PNP
Package:	DFNWB2*2-6
Specification:	PNP Power Transistor with N‑MOSFET
Power Rating:	small power
Availability:





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Product Description

Manufacturing plant DFNWB2*2-6L N-MOSFET PNP Power Transistor High Semiconductor Electronic Component

Features
Ultra low collector-to-emitter saturation voltage
High DC current gain
Small package DFNWB2*2-6L

Applications
Charging circuit
Other power management in portable equipment

V(BR)DSS	RDS(ON)MAX	ID
20V	600mΩ @4.5V	0.8A
	650mΩ @ 2.5V
	700mΩ @ 1.8V
-32V	/	-1.5A

Maximum Ratings (Ta=25℃ unless otherwise noted)

Parameter	Symbol	Limit	Unit
PNP Transistor
Collector-Base Voltage	VCBO	-32	V
Collector-Emitter Voltage	VCEO	-25	V
Emitter-Base Voltage	VEBO	-6	V
Collector Current-Continuous(Note1)	IC	-1.5	A
Collector Current-Continuous(Note2)	IC	-0.6	A
Collector Current-Pulse(Note3)	ICM	-4	A
N-MOSFET
Drain-Source Voltage	VDS	20	V
Gate-Source Voltage	VGS	±5	V
Drain Current-Continuous(Note1)	ID	0.8	A
Drain Current-Continuous(Note2)	ID	0.69
Drain Current-Pulse(Note3)	IDM	1.4	A