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B2B AI-Powered Companion Cat Doll multiple languages PCBA Module Manufacturing OEM Factory

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Production manufacturer OEM Voice Recognition Smart Cat Doll with PCBA Module Wholesale Patented Tech

Charging input:	5V 2A
cell voltage:	3.7-4.2V
maximum power:	5W
product size:	909090mm+tail 100mm
battery capacity:	1000mAh
Color:	Silver Fox Gray/Amber Orange
Product material:	Plush fabric made of 100% polyester fiber, plastic core, electronic components

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Production manufacturer OEM Voice Recognition Smart Cat Doll with PCBA Module Wholesale Patented Tech

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B2B AI-Powered Companion Cat Doll multiple languages PCBA Module Manufacturing OEM Factory

Charging input:	5V 2A
cell voltage:	3.7-4.2V
maximum power:	5W
product size:	909090mm+tail 100mm
battery capacity:	1000mAh
Color:	Silver Fox Gray/Amber Orange
Product material:	Plush fabric made of 100% polyester fiber, plastic core, electronic components

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B2B AI-Powered Companion Cat Doll multiple languages PCBA Module Manufacturing OEM Factory

Manufacturer supplier Patented Advanced Design Doll AI Companion Plush PufferFish Toy for OEM/ODM

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Manufacturer supplier Patented Advanced Design Doll AI Companion Plush PufferFish Toy for OEM/ODM

Charging input:	5V 2A
cell voltage:	3.7-4.2V
maximum power:	5W
battery capacity:	1000mAh
Color:	4 colors
Product material:	Plush fabric made of 100% polyester fiber, plastic core, electronic components
product size:	1359090mm

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Manufacturer supplier Patented Advanced Design Doll AI Companion Plush PufferFish Toy for OEM/ODM

High-Tech AI Doll Companion Plush Toy Intelligent Evolving Personality Pufferfish Doll Manufacturer

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High-Tech AI Doll Companion Plush Toy Intelligent Evolving Personality Pufferfish Doll Manufacturer

Charging input:	5V 2A
cell voltage:	3.7-4.2V
maximum power:	5W
battery capacity:	1000mAh
Color:	4 colors
Product material:	Plush fabric made of 100% polyester fiber, plastic core, electronic components
product size:	1359090mm

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High-Tech AI Doll Companion Plush Toy Intelligent Evolving Personality Pufferfish Doll Manufacturer

Manufacturing plant High Tech 150MW VC143ZME SOT-723 NPN Digital Transistor Semiconductor for Smart Devices

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Manufacturing plant High Tech 150MW VC143ZME SOT-723 NPN Digital Transistor Semiconductor for Smart Devices

Material:	Silicon
Structure:	NPN
Package Structure:	Plastic Sealed Transistor
Power Grade:	Small Power
Supply Voltage:	50V
Output Current:	100mA
Power Dissipation:	150MW

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Manufacturing plant High Tech 150MW VC143ZME SOT-723 NPN Digital Transistor Semiconductor for Smart Devices

Direct factory Advanced Design N-Channel Enhancement Mode MOSFET VC9320A-1 SOT-723 Semiconductor

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Direct factory Advanced Design N-Channel Enhancement Mode MOSFET VC9320A-1 SOT-723 Semiconductor

Material:	Silicon
Structure:	Planar
Package Structure:	Plastic Sealed Transistor
Drain-Source Voltage:	20V
Gate-Source Voltage:	±10V
Continuous Drain Current:	1.0A
Power Dissipation:	0.2W

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Direct factory Advanced Design N-Channel Enhancement Mode MOSFET VC9320A-1 SOT-723 Semiconductor

Production manufacturer Power Management 1.3A SOT23-3 OVP IC Semiconductor for Electronic Component Protection

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Production manufacturer Power Management 1.3A SOT23-3 OVP IC Semiconductor for Electronic Component Protection

Conduction Type:	Unipolar Integrated Circuit
Integration Level:	SSI
Mounting Type:	SMT
Specification:	OVP IC
Input Withstand Voltage:	45V
Hot Plug Capability:	40V
ESD Rating:	±3kv

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Production manufacturer Power Management 1.3A SOT23-3 OVP IC Semiconductor for Electronic Component Protection

Manufacturer Advanced Design Bidirectional Dfn0603-2 Tvs Diode Vctb3V32515LC Integrated Circuit

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Manufacturer Advanced Design Bidirectional Dfn0603-2 Tvs Diode Vctb3V32515LC Integrated Circuit

Material:	Silicon
Structure:	Planar
Package Structure:	Plastic Sealed Transistor
Working Frequency:	High Frequency
Operating Voltage:	3.3V
Peak Pulse Power:	80W
Peak Pulse Current:	8A

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Manufacturer Advanced Design Bidirectional Dfn0603-2 Tvs Diode Vctb3V32515LC Integrated Circuit

Original manufacturer Patented Design PTH NPN Bjt Transistor Semiconductor VC2N4401Z TO-92 600mA Integrated Circuit

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Original manufacturer Patented Design PTH NPN Bjt Transistor Semiconductor VC2N4401Z TO-92 600mA Integrated Circuit

Material:	Silicon
Structure:	NPN
Package Structure:	Plastic Sealed Transistor
Collector-Base Voltage:	60V
Emitter-Base Voltage:	6V
Collector Current -Continuous:	600mA
Collector Power Dissipation:	0.625W

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Original manufacturer Patented Design PTH NPN Bjt Transistor Semiconductor VC2N4401Z TO-92 600mA Integrated Circuit

Production manufacturer Bulk Supply Through-Hole -40V PNP Transistor Semiconductor VC2N3906Z TO-92 Electronic Components

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Production manufacturer Bulk Supply Through-Hole -40V PNP Transistor Semiconductor VC2N3906Z TO-92 Electronic Components

Material:	Silicon
Structure:	PNP
Mounting Method:	Through‑Hole
Package Structure:	Plastic Sealed Transistor
Collector-Base Voltage:	-40V
Emitter-Base Voltage:	-5V
Collector Current -Continuous:	-0.2A

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Production manufacturer Bulk Supply Through-Hole -40V PNP Transistor Semiconductor VC2N3906Z TO-92 Electronic Components

Factory Direct SOT-523 150mW VC1012F ESD 2000V N-Channel MOSFET TRANSISTOR for Global Distribution

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Factory Direct SOT-523 150mW VC1012F ESD 2000V N-Channel MOSFET TRANSISTOR for Global Distribution

Material:	Silicon
Structure:	Planar
Package Structure:	Plastic Sealed Transistor
Drain-Source Voltage:	20V
Gate-Source Voltage:	±6V
Power Dissipation:	150MW
Continuous Drain Current:	500mA

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Factory Direct SOT-523 150mW VC1012F ESD 2000V N-Channel MOSFET TRANSISTOR for Global Distribution

Original factory VCMNT32D PNP Power Transistor with N-Mosfet, Factory Direct OEM SKD Integrated Circuit

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Original factory VCMNT32D PNP Power Transistor with N-Mosfet, Factory Direct OEM SKD Integrated Circuit

Material:	Silicon
Package Structure:	Plastic Sealed Transistor
Mounting Method:	SMD Triode
Structure:	PNP
Package:	DFNWB2*2-6
Specification:	PNP Power Transistor with N‑MOSFET
Power Rating:	small power

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Original factory VCMNT32D PNP Power Transistor with N-Mosfet, Factory Direct OEM SKD Integrated Circuit

Production manufacturer DFNWB3×2-08L-B Power Composite Integrated VC2301A MOSFET-Schottky Diode Semiconductor

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Production manufacturer DFNWB3×2-08L-B Power Composite Integrated VC2301A MOSFET-Schottky Diode Semiconductor

Material:	Silicon
Package Structure:	Plastic Sealed Transistor
Application:	Electronic Products
Structure:	Planar
Package:	Dfnwb3×2-08L-B
Storage Temperature:	-55~+150℃
DC Blocking Voltage:	20V

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Production manufacturer DFNWB3×2-08L-B Power Composite Integrated VC2301A MOSFET-Schottky Diode Semiconductor

Factory supplier Exclusive 0.3A SOT-23 NPN Plastic-Encapsulate Transistors Semiconductor VC8050X for Circuit Design

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Factory supplier Exclusive 0.3A SOT-23 NPN Plastic-Encapsulate Transistors Semiconductor VC8050X for Circuit Design

Material:	Silicon
Structure:	NPN
Operating Frequency:	Low Frequency
Function:	Switching Triode
Collector-Base Voltage:	40V
Collector Current:	300mA
Collector Power Dissipation:	300MW

Quantity:

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Factory supplier Exclusive 0.3A SOT-23 NPN Plastic-Encapsulate Transistors Semiconductor VC8050X for Circuit Design

OEM factory OEM Manufacturer 200MW SOD-323 Schottky Barrier Diode Vc103awsb SKD Electronic Components

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OEM factory OEM Manufacturer 200MW SOD-323 Schottky Barrier Diode Vc103awsb SKD Electronic Components

Material:	Silicon
Structure:	200MW Schottky Diode
Package Structure:	Plastic Sealed Transistor
Peak Repetitive Reverse Voltage:	40V
Average Forward Rectified Current:	350mA
Ifsm:	2A
Power Dissipation:	200MW

Quantity:

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OEM factory OEM Manufacturer 200MW SOD-323 Schottky Barrier Diode Vc103awsb SKD Electronic Components

Original manufacturer Integrated Circuit SOD-123FL Schottky Barrier Diode Vrrm 40V Vcds24wz If (AV) 2A

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Original manufacturer Integrated Circuit SOD-123FL Schottky Barrier Diode Vrrm 40V Vcds24wz If (AV) 2A

Material:	Silicon
Structure:	Surface Mount Schottky
Package Structure:	Plastic Sealed Transistor
Maximum Repetitive Peak Reverse Voltage:	40V
Peak Pulse Power:	2A
Ifsm:	50A
Maximum RMS Voltage:	28V

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Original manufacturer Integrated Circuit SOD-123FL Schottky Barrier Diode Vrrm 40V Vcds24wz If (AV) 2A

Direct Factory SMD Switching Diode 150mA VC1N4148WB SOD-123 Fast Recovery Signal Diode Integrated Circuit

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Direct Factory SMD Switching Diode 150mA VC1N4148WB SOD-123 Fast Recovery Signal Diode Integrated Circuit

Max Forward Current:	150mA
Max Reverse Current:	1uA
Max Reverse Voltage:	75V
Type:	Silicon Epitaxial Planar Switching Diode
Specification:	Plastic surface mounted package
Package:	SOD‑123
Temperature Range:	-55~+150℃

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Direct Factory SMD Switching Diode 150mA VC1N4148WB SOD-123 Fast Recovery Signal Diode Integrated Circuit

Fast Switching Diode Semiconductor Manufacturer High Speed Signal Circuit Application Electronic Components

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Fast Switching Diode Semiconductor Manufacturer High Speed Signal Circuit Application Electronic Components

Package Structure:	Glass Sealed Transistor
Application:	Electronic Products
Material:	Silicon
Structure:	Planar
Peak Reverse Voltage:	100V
Reverse Voltage:	75 V
Average Rectified Forward Current:	200mA

Quantity:

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Fast Switching Diode Semiconductor Manufacturer High Speed Signal Circuit Application Electronic Components

Low Capacitance DFN1610-2L VCTU7V550F3S TVS Diode 7V Voltage Limiter Electronic Component Semiconductor

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Low Capacitance DFN1610-2L VCTU7V550F3S TVS Diode 7V Voltage Limiter Electronic Component Semiconductor

Material:	Silicon
Structure:	Planar
Package Structure:	DFN Plastic SMD Packaged Tvs Diode
Working Frequency:	Wide Frequency Range for ESD and Surge Protection
Peak Pulse Power:	1600W
Peak Pulse Current:	80A
Reverse Leakage Current:	1.0uA

Quantity:

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Low Capacitance DFN1610-2L VCTU7V550F3S TVS Diode 7V Voltage Limiter Electronic Component Semiconductor

Original manufacturer Hot Sell Premium Patent Circuit Boards for High-Performance Custom AI PCBA Solutions

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Original manufacturer Hot Sell Premium Patent Circuit Boards for High-Performance Custom AI PCBA Solutions

Type:	Flame Retardant 4 PCBA
Flame Retardant Property:	UL94 V‑0
Dielectric Layer:	FR‑4
Base Material:	Copper
Processing Technology:	Electrolytic Foil
Material:	Flame Retardant
Specification:	20.50mm * 13.8mm

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