Matte Tin(Sn) Lead Finish
Features: This new series of digital transistors is designed to replace a single device and
its external resistor bias network. The BRT (Bias Resistor Transistor) contains a
single transistor with a monolithic bias network consisting of two resistors: a
series base resistor and a base-emitter resistor. The BRT eliminates these
individual components by integrating them into a single device. The device is
designed for low power surface mount applications.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
VCBO Collector-Base Voltage 50 V
VCEO Collector-Emitter Voltage 50 V
IC Collector Current 100 mA
PD Power Dissipation 150 mW
RθJA Thermal Resistance from Junction to Ambient 600 ºC/W
TJ TSTG Junction & Storage Temperature Range -55 to +150 ºC
Electrical Characteristics (TA = 25°C unless otherwise noted)
Off Characteristics | Symbol | Parameter | Test Condition | Limits | Unit |
| Min | Typ | Max |
| ICBO | Collector-Base Cutoff Current | VCB =50V, IE =0A | - | - | 100 | nA |
| ICEO | Collector-Emitter Cutoff Current
| VCE =50V, IB =0A | - | - | 500 | nA |
| IEBO | Emitter-Base Cutoff Curren
| VEB =6.0V, IC =0A | - | - | 0.18
| mA |
| V(BR)CBO | Collector-Base Breakdown Voltage | IC =10uA, IE =0A | 50 | - | - | Volts |
| V(BR)CEO | Collector-Emitter Breakdown Voltage (Note 1) | IC =2.0mAA, IB =0A | 50 | - | - | Volts |
Note 1: Pulse Test. Pulse width <300us, Duty cycle < 2.0%)
