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High-Performance NPN Transistor VCSS8050B-1.5A 300MW SOT-23 Manufacturer SKD Solution Support Electronic Product Assembly Services

High-Performance NPN Transistor VCSS8050B-1.5A 300MW SOT-23 Manufacturer SKD Solution Support Electronic Product Assembly Services

1.High-performance NPN silicon transistor, 1.5A continuous collector current, ideal for switching applications

2.Compact SOT-23 surface-mount package, saves PCB board space

3.Stable electrical performance, low power consumption for long-time operation

4.RoHS & REACH compliant, meets international environmental requirements

5.Wide application for home appliances, LED drive, smart PCBA control board

6.Strict quality control, full-test before delivery, low failure rate

7.Fast switching speed for signal switching and circuit drive

Model:
VCSS8050B-1.5A
Brand:
Weforsemi
Code:
NPN Transistor

Quantity:
Mounting Type:	SMD Triode
Power Rating::	Small Power
Structure:	NPN
Collector Power Dissipation:	300MW
Emitter-Base Voltage:	5V
Collector Current -Continuous:	1.5A
PACKAGE:	SOT-23
Availability:





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Product Description

High-Performance NPN Transistor VCSS8050B-1.5A 300MW SOT-23 Manufacturer SKD Solution Support Electronic Product Assembly Services

Product Description

FEATURES
Complimentary to VCSS8550B-1.5A

MAXIMUM RATINGS (TA=25ºC unless otherwise noted)

Vcbo (Collector-Base Voltage): 40V
Vceo (Collector-Emitter Voltage): 25V
Vebo (Emitter-Base Voltage): 5V
Ic (Collector Current-Continuous): 1.5A
Pc (Collector Power Dissipation): 0.3W
Tj (Junction Temperature): 150ºC
Tstg (Storage Temperature): -55ºC ~ 150ºC

Important Notice and Disclaimer
Weforsemi reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use.
Weforsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Weforsemi assume any liability for application assistance or
customer product design. Weforsemi does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Weforsemi .
Weforsemi products are not authorized for use as critical components in life support devices or systems without express written approval of Weforsemi .

ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless otherwise specified)

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	IC= 100μA, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 0.1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100μA, IC=0	5			V
Collector cut-off current	ICBO	VCB=40V, IE=0			0.1	μA
Collector cut-off current	ICEO	VCB=20V, IE=0			0.1	μA
Emitter cut-off current	IEBO	VEB= 5V, IC=0			0.1	μA
DC current gain	hFE(1)	VCE=1V, IC= 100mA	120		400
DC current gain	hFE(2)	VCE=1V, IC= 800mA	40
Collector-emitter saturation voltage	VCE(sat)	IC=800mA, IB= 80mA			0.5	V
Base-emitter saturation voltage	VBE(sat)	IC=800mA, IB= 80mA			1.2	V
Transition frequency	fT	VCE=10V, IC= 50mA f=30MHz	100			MHz