VCMNT32D
Weforsemi
VCMNT32D
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Original factory VCMNT32D PNP Power Transistor with N-Mosfet, Factory Direct OEM SKD Integrated Circuit
Features
Ultra low collector-to-emitter saturation voltage
High DC current gain
Small package DFNWB2*2-6L
Applications
Charging circuit
Other power management in portable equipment
| V(BR)DSS | RDS(ON)MAX | ID |
20V | 600mΩ @4.5V | 0.8A |
| 650mΩ @ 2.5V | ||
| 700mΩ @ 1.8V | ||
| -32V | / | -1.5A |
Maximum Ratings (Ta=25℃ unless otherwise noted)
| Parameter | Symbol | Limit | Unit |
| PNP Transistor | |||
| Collector-Base Voltage | VCBO | -32 | V |
| Collector-Emitter Voltage | VCEO | -25 | V |
| Emitter-Base Voltage | VEBO | -6 | V |
| Collector Current-Continuous(Note1) | IC | -1.5 | A |
| Collector Current-Continuous(Note2) | -0.6 | A | |
| Collector Current-Pulse(Note3) | ICM | -4 | A |
| N-MOSFET | |||
| Drain-Source Voltage | VDS | 20 | V |
| Gate-Source Voltage | VGS | ±5 | V |
| Drain Current-Continuous(Note1) | ID | 0.8 | A |
| Drain Current-Continuous(Note2) | 0.69 | ||
| Drain Current-Pulse(Note3) | IDM | 1.4 | A |

