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Production manufacturer Bulk Supply Through-Hole -40V PNP Transistor Semiconductor VC2N3906Z TO-92 Electronic Components

Production manufacturer Bulk Supply Through-Hole -40V PNP Transistor Semiconductor VC2N3906Z TO-92 Electronic Components

1.General-purpose PNP silicon transistor, model VC2N3906Z, TO-92 through-hole package

2.Fast switching performance for signal switch circuits

3.Low leakage current and stable electrical characteristics

4.Standard TO-92 through-hole package, easy manual & wave soldering assembly

5.High reliability, meets RoHS and REACH compliance

6.Factory direct supply, support OEM and SKD customization

7.Ideal for signal amplification and switching applications

8.Strict batch testing, consistent product performance

Model:
VC2N3906Z
Brand:
Weforsemi
Code:
VC2N3906Z TO-92

Quantity:
Material:	Silicon
Structure:	PNP
Mounting Method:	Through‑Hole
Package Structure:	Plastic Sealed Transistor
Collector-Base Voltage:	-40V
Emitter-Base Voltage:	-5V
Collector Current -Continuous:	-0.2A
Availability:





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Product Description

Production manufacturer Bulk Supply Through-Hole -40V PNP Transistor Semiconductor VC2N3906Z TO-92 Electronic Components

FEATURES
PNP silicon epitaxial planar transistor for switching and Amplifier applications
As complementary type, the NPN transistor VC2N3904Z is Recommended
This transistor is also available in the SOT-23 case with the type designation VC3906B

MAXIMUM RATINGS (TA=25ºC unless otherwise noted)

Collector-Base Voltage: -40V
Collector-Emitter Voltage: -40V
Emitter-Base Voltage: -5V

Continuous Collector Current: -0.2A
Collector Power Dissipation: 0.625W

Maximum Junction Temperature: 150ºC
Storage Temperature Range: -55ºC ~ 150ºC

ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless otherwise specified)

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	IC = -10μA, IE=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC =-1mA , IB=0	-40			V
Emitter-base breakdown voltage	V(BR)EBO	IE= -10μA, IC=0	-5			V
Collector cut-off current	ICBO	VCB= -40 V,IE=0			-0.1	μA
Collector cut-off current	ICEX	VCE= -30 V,VBE(off)=-3V			-50	nA
Emitter cut-off current	IEBO	VEB= -5 V , IC=0			-0.1	μA
DC current gain	hFE1	VCE=-1 V, IC= -10mA	100		400
	hFE2	VCE=-1 V, IC= -50mA	60
	hFE3	VCE=-1 V, IC= -100mA	30
Collector-emitter saturation voltage	VCE(sat)	IC= -50mA, IB= -5mA			-0.4	V
Base-emitter saturation voltage	VBE(sat)	IC= -50mA, IB= -5mA			-0.95	V
Transition frequency	fT	VCE=-20V, IC= -10mA f = 100MHz	250			MHz
Delay Time	td	VCC=-3V,VBE=-0.5V, IC=-10mA,IB1=-1mA			35	ns
Rise Time	tr	VCC=-3V,VBE=-0.5V, IC=-10mA,IB1=-1mA			35	ns
Storage Time	ts	VCC=-3V,Ic=-10mA IB1=IB2=-1mA			225	ns
Fall Time	tf	VCC=-3V,Ic=-10mA IB1=IB2=-1mA			75	ns