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Home » Products » Transistors / Discrete Semiconductors » Bipolar Junction Transistors (BJT) / Triodes » Original manufacturer Patented Design PTH NPN Bjt Transistor Semiconductor VC2N4401Z TO-92 600mA Integrated Circuit

Product Category

1.PTH TO-92 through-hole package, easy for manual welding

2.600mA high current capacity, stable NPN switching performance

3.Low saturation voltage, low power consumption

4.High switching speed for general-purpose circuit applications

5.RoHS compliant, reliable mass-production consistency

6.Advanced chip design, excellent anti-interference capability

7.Strict full-test before delivery, low failure rate

Quantity:
Material:	Silicon
Structure:	NPN
Package Structure:	Plastic Sealed Transistor
Collector-Base Voltage:	60V
Emitter-Base Voltage:	6V
Collector Current -Continuous:	600mA
Collector Power Dissipation:	0.625W
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Original manufacturer Patented Design PTH NPN Bjt Transistor Semiconductor VC2N4401Z TO-92 600mA Integrated Circuit

FEATURES
Power dissipation

MAXIMUM RATINGS ( T a =25ºC unless otherwise noted )

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=100μA , IE=0	60		V
Collector-emitter breakdown voltage	V(BR)CEO	IC= 1mA , IB=0	40		V
Emitter-base breakdown voltage	V(BR)EBO	IE=100μA, IC=0	6		V
Collector cut-off current	ICBO	VCB=35V, IE=0		0.1	μA
Emitter cut-off current	IEBO	VEB=5V, IC=0		0.1	μA
DC current gain	hFE(1)	VCE=1V, IC= 0. 1mA	20
	hFE(2)	VCE=1V, IC=1mA	40
	hFE(3)	VCE=1V, IC= 10mA	80
	hFE(4)	VCE=1V, IC=150mA	100	300
	hFE(5)	VCE=2V, IC= 500mA	40
Collector-emitter saturation voltage	VCE(sat)1	IC=150 mA, IB=15mA		0.4	V
Collector-emitter saturation voltage	VCE(sat)2	IC=500 mA, IB=50mA		0.75	V
Base-emitter saturation voltage	VBE(sat)1	IC=150 mA, IB=15mA		0.95	V
Base-emitter saturation voltage	VBE(sat)2	IC=500 mA, IB=50mA		1.2	V
Transition frequency	f T	VCE= 10V, IC= 20mA, f=100MHz	250		MHz
Output Capacitance	Cob	VCB=10V, IE= 0, f=100KHz		6.5	pF
Delay time	td	VCC=30V, VBE(OFF)=2V IC=150mA, IB1=15mA		15	nS
Rise time	tr	VCC=30V, VBE(OFF)=2V IC=150mA, IB1=15mA		20	nS
Storage time	tS	VCC=30V, IC=150mA IB1=-IB2= 15mA		225	nS
Fall time	tf	VCC=30V, IC=150mA IB1=-IB2= 15mA		30	nS