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Home » Products » Transistors / Discrete Semiconductors » Bipolar Junction Transistors (BJT) / Triodes » Factory supplier Exclusive 0.3A SOT-23 NPN Plastic-Encapsulate Transistors Semiconductor VC8050X for Circuit Design

Product Category

1.Factory direct supply, flexible OEM & SKD customization

2.Exclusive patented advanced mini SOT-23 packaging design

3.High-tech stable chip, low saturation voltage loss

4.0.3A rated current, ideal for small signal switching

5.Compact SOT-23 package, save PCB layout space

6.Wide operating temperature range, strong environmental adaptability

7.Strict full factory inspection, consistent mass production performance

8.Mature production line, short lead time for bulk orders

Quantity:
Material:	Silicon
Structure:	NPN
Operating Frequency:	Low Frequency
Function:	Switching Triode
Collector-Base Voltage:	40V
Collector Current:	300mA
Collector Power Dissipation:	300MW
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Factory supplier Exclusive 0.3A SOT-23 NPN Plastic-Encapsulate Transistors Semiconductor VC8050X for Circuit Design

FEATURES
Collector Current: IC=0.3A
Power Dissipation of 300 mW

Package Marking and Ordering Information

Product ID	Pack	Marking	Qty(PCS)
VC8050X-0.3A	SOT-23	J3Y	3000

MAXIMUM RATINGS (Ta=25ºC unless otherwise noted)

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC= 100μA, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100μA, IC=0	5			V
Collector cut-off current	ICBO	VCB=40 V , IE=0			0.1	μA
Collector cut-off current	ICEO	VCB=20V , I E=0			3.0	μA
Emitter cut-off current	IEBO	VEB= 5V , IC=0			0.1	μA
DC current gain	hFE(1)	VCE=1V, I C= 50mA	85		400
DC current gain	hFE(2)	VCE=1V, I C= 500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=500 mA, IB= 50mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=500 mA, IB= 50mA			1.2	V
Transition frequency	fT	VCE=6V, I C= 20mA f=30MHz	150			MHz