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Advanced Design VC3906B SOT-23 Plastic PNP Plastic-Encapsulate Transistors semiconductor Electronics Manufacturing Partner

PNP Transistor SOT-23 Manufacturer High-Tech Semiconductor Fast Speed Electronic Component VC3906B Transistors ODM Electronics Solutions

1.Standard SOT-23 compact package, save PCB layout space

2.Stable small-signal PNP amplification & switching performance

3.High current gain, low saturation voltage for low-power circuits

4.Wide operating temperature range for complex working conditions

5.Factory direct supply, support OEM, ODM & SKD customization

6.reel packing, fully compatible with automatic SMT lines

7.Complete technical drawings & professional FAE support

8.Sufficient stock, fast delivery with competitive factory price

Model:
VC3906B
Brand:
Weforsemi
Code:
PNP Plastic-Encapsulate Transistors

Quantity:
Package Structure::	Plastic Sealed Transistor
Mounting Type:	SMD Triode
Power Rating:	Small Power
Structure:	PNP
Collector-Base Voltage:	-40V
Emitter-Base Voltage:	-5V
Collector Current:	-200mA
Availability:





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Product Description

PNP Transistor SOT-23 Manufacturer High-Tech Semiconductor Fast Speed Electronic Component VC3906B Transistors ODM Electronics Solutions

Product Description

FEATURES
Complementary Type The NPN Transistor VC3904B is Recommended Epitaxial Planar Die Construction

MAXIMUM RATINGS (Ta=25ºC unless otherwise noted)

Collector-Base Voltage (VCBO): -40V
Collector-Emitter Voltage (VCEO): -40V
Emitter-Base Voltage (VEBO): -5V
Max Collector Current (IC): -200mA
Total Power Dissipation (PC): 200mW
Junction-to-Ambient Thermal Resistance (RθJA): 625ºC/W
Maximum Junction Temperature (TJ): 150ºC
Storage Temperature Range (Tstg): -55ºC ~ +150ºC

Important Notice and Disclaimer
Weforsemi reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and specifications before final design, purchase or use.
Weforsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Weforsemi assume any liability for application assistance or
customer product design. Weforsemi does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Weforsemi .
Weforsemi products are not authorized for use as critical components in life support devices or systems without express written approval of Weforsemi .

ELECTRICAL CHARACTERISTICS (T a =25ºC unless otherwise specifi ed)

Parameter	Symbol	Test conditions	Min	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	IC=-10μA, IE=0	-40		V
Collector-emitter breakdown voltage	V(BR)CEO	IC=-1mA, IB=0	-40		V
Emitter-base breakdown voltage	V(BR)EBO	IE=-10μA, IC=0	-5		V
Collector cut-off current	ICBO	VCB=-40V, IE=0		-0.1	µA
Collector cut-off current	ICEX	VCE=-30V, VBE(off)=-3V		-50	nA
Emitter cut-off current	IEBO	VEB=-5V, IC=0		-0.1	µA
DC current gain	hFE(1)	VCE=-1V, IC=-10mA	100	300
	hFE(2)	VCE=-1V, IC= -50mA	60
	hFE(3)	VCE=-1V, IC= -100mA	30
Collector-emitter saturation voltage	VCE(sat)	IC=-50mA, B= -5mA		-0.3	V
Base-emitter saturation voltage	VBE(sat)	IC= -50mA, IB=-5mA		-0.95	V
Transition frequency	fT	VCE=-20V, IC=-10mA,f=100MHz	300		MHz
Delay Time	td	VCC=-3V, VBE=-0.5V IC=-10mA, IB1=-IB2=-1mA		35	nS
Rise Time	tr			35	nS
Storage Time	ts	VCC=-3V, IC=-10mA, IB1=-IB2=-1mA		225	nS
Fall Time	tf			75	nS