FEATURES
Complementary Type The NPN Transistor  VC3904B is Recommended Epitaxial Planar Die Construction

MAXIMUM RATINGS (Ta=25ºC unless otherwise noted)

• Collector-Base Voltage (VCBO): -40V

• Collector-Emitter Voltage (VCEO): -40V

• Emitter-Base Voltage (VEBO): -5V

• Max Collector Current (IC): -200mA

• Total Power Dissipation (PC): 200mW

• Junction-to-Ambient Thermal Resistance (RθJA): 625ºC/W

• Maximum Junction Temperature (TJ): 150ºC

• Storage Temperature Range (Tstg): -55ºC ~ +150ºC

Important Notice and Disclaimer
Weforsemi reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and  specifications before final design, purchase or use.
Weforsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Weforsemi  assume any liability for application assistance or
customer product design. Weforsemi does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Weforsemi .
Weforsemi  products are not authorized for use as critical components in life support devices or systems without express written approval of Weforsemi .

ELECTRICAL CHARACTERISTICS (T a =25ºC unless otherwise specifi ed)