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Home » Products » Transistors / Discrete Semiconductors » Field-Effect Transistors (FET / MOSFET) » Electronic Component SOT-23 MOSFET VC2301HX-2.3A TrenchFET Power Transistor DC/DC Converter Load Switch P-Channel MOSFET

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Electronic Component SOT-23 MOSFET VC2301HX-2.3A TrenchFET Power Transistor DC/DC Converter Load Switch P-Channel MOSFET

Electronic Component SOT-23 MOSFET VC2301HX-2.3A TrenchFET Power Transistor DC/DC Converter Load Switch P-Channel MOSFET

1.P-Channel Enhancement Mode MOSFET, VDS=-20V, Continuous Drain Current: -2.3A

2.Compact SOT-23 surface mount package, save PCB layout space

3.Low On-Resistance Rds(on), reduce conduction loss & heat generation

4.Stable switching performance, suitable for low-voltage load switch application

5.Wide application range for consumer electronics, battery management circuit

Model:
VC2301HX-2.3A
Brand:
Weforsemi
Code:
P-Channel 20V(D-S) MOSFET

Quantity:
Material:	Power Semiconductor
Package::	SOT-23
Type:	P-Type Semiconductor
Specification:	P-Channel 20V(D-S) MOSFET
Feature:	Trenchfet Power Mosfet
Application1:	Load Switch for Portable Devices
Application2:	DC/DC Converter
Availability:





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Product Description

Electronic Semiconductor VC2301HX-2.3A 20V P-Channel MOSFET SOT-23 Transistor

Product Description

Configuration

VDSS= -20 V ID= -2.3 A
RDS(on) < 150mΩ@VGS =-4.5V
RDS(on) < 175mΩ@VGS =-2.5V

Feature
TrenchFET Power MOSFET

Application
Load Switch for Portable Devices
DC/DC Converter

Maximum ratings (Ta=25ºC unless otherwise noted)

Parameter	Symbol	Value	Unit
Drain-Source Voltage	VDS	-20	V
Gate-Source Voltage	VGS	±8	V
Continuous Drain Current	ID	-2.3	A
Pulsed Drain Current	IDM	-10
Continuous Source-Drain Diode Current	IS	-0.72
Maximum Power Dissipation	PD	0.4	W
Thermal Resistance from Junction to Ambient(t ≤5s)	R θJA	312.5	ºC/W
Junction Temperature	TJ	-55 ~+150	ºC
Storage Temperature	Tstg	-55 ~+150	ºC

MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ºC unless otherwise specified

Parameter	Symbol		Test Condition	Min	Typ	Max	Units
Static
Drain-source breakdown voltage	V(BR)DSS	VGS = 0V, ID =-250µA		-20			V
Gate-source threshold voltage	VGS(th)	VDS =VGS, ID =-250µA		-0.4	-0.7	-1
Gate-source leakage	IGSS	VDS =0V, VGS =±8V				± 100	nA
Zero gate voltage drain current	IDSS	VDS =-20V, VGS =0V				-1	µA
Drain-source on-state resistance a	RDS(on)	VGS =-4.5V, ID =-2.3A			125	150	m Ω
		VGS =-2.5V, ID =-2.0A			142	175
Forward transconductance a	gfs	VDS =-5V, ID =-2.3A			6.5		S
Dynamicb
Input capacitance	Ciss	VDS =-10V,VGS =0V,f =1MHz			405		pF
Output capacitance	Coss				75
Reverse transfer capacitance	Crss				55
Total gate charge	Qg	VDS =-10V,VGS =-4.5V,ID =-2.3A			5.5		nC
		VDS =-10V,VGS =-2.5V,ID =-2.3A			3.3
Gate-source charge	Qgs				0.7
Gate-drain charge	Qgd				1.3
Gate resistance	Rg	f =1MHz			6.0		Ω
Turn-on delay time	td(on)	VDD=-10V, RL=10Ω , ID =-1A, VGEN=-4.5V,Rg=1Ω			11	2	ns
Rise time	tr				35	6
Turn-off delay time	td(off)				30	5
Fall time	tf				10	2
Drain-source body diode characteristics
Continuous source-drain diode current	IS	TC=25ºC				-1.3	A
Pulse diode forward current a	ISM					-10
Body diode voltage	VSD	IS=-0.7A			-0.8	-1.2	V