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Factory Direct Supply Semiconductor VCAA3134KLC 20V N-MOSFET SOT-883 Power Switching Transistor

Wholesale SOT-883 N-Channel 20V Power MOSFET for Wearable Smart Devices Load Switch Semiconductor

Factory Direct Supply Semiconductor VCAA3134KLC 20V N-MOSFET SOT-883 Power Switching Transistor

1.This VCAA3134KLC N-channel MOSFET features a 20V drain-source voltage rating with stable switching performance for low-voltage power control circuits.

2.Adopting compact SOT-883 surface-mount package, the power MOSFET saves PCB layout space and supports efficient automated SMT assembly processing.

3.The power MOSFET delivers low conduction loss and high durability, perfectly matching consumer electronics, battery management and DC-DC conversion scenarios.

4.Ultra-small SOT-883 package maximizes PCB space saving for high-density electronic designs.

5.Minimal footprint design perfectly engineered for modern space-constrained smart wearable devices.

6.Advanced N-Channel 20V D-S technology delivers stable and highly efficient power management.

7.Features extremely low on-resistance to minimize power dissipation and thermal buildup.

8.Optimized specifically for load switch applications to ensure smooth rail voltage control.

9.Ideal power control solution for cellular handsets, smartphones, and mobile phone accessories.

10.Perfectly compatible with Personal Digital Assistants (PDAs) and portable instrumentation boards.

Model:
VCAA3134KLC
Brand:
Weforsemi
Code:
N-Channel 20V (D-S) Power MOSFET

Quantity:
Drain-Source Voltage:	20V
Gate-source Voltage:	±10 V
Continuous Drain Current:	1A
Pulsed Drain Current(1):	4.0 A
Total Power Dissipation @ TA=25°C:	430mW
TJ,TSTG:	-55 to +150°C
Applications:	Load switch
Availability:





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Product Description

Factory Direct Supply Semiconductor VCAA3134KLC 20V N-MOSFET SOT-883 Power Switching Transistor

Description
VCAA3134KLC is the N-Channel enhancement-mode power field effect transistors with high cell density and trench technology. This high-density process and design have been optimized for switching performance and especially tailored to minimize on-state resistance.

Applications
Cellular Handsets and Accessories
Personal Digital Assistants
Portable Instrumentation
Load switch

Features
VDS: 20V
ID: 0.9A
RDSON (@VGS=4.5V) : < 250mΩ
RDSON (@VGS=2.5V) : < 350mΩ
High density cell design for extremely low RDSON
Excellent on-resistance and DC current capability

Electrical Characteristics (TJ=25 ºC unless otherwise noted)

Parameter	Symbol	Conditions	Min	Typ	Max	Units
Static Parameter
Drain-Source Breakdown Voltage	BVDSS	VGS=0V,ID=250μA	20			V
Zero Gate Voltage Drain Current	IDSS	VDS=20V,VGS=0V,TC=25°C			1	μA
Gate-Body Leakage Current	IGSS	VGS=±10V,VDS=0V			±10	uA
Gate Threshold Voltage	VGS(th)	VDS=VGS,ID=250μA	0.35	0.75	1.1	V
Static Drain-Source on-Resistance	RDS(on)	VGS=4.5V,ID=0.5A		170	250	mΩ
Static Drain-Source on-Resistance	RDS(on)	VGS=2.5V,ID=0.3A		225	350	mΩ
Diode Forward Voltage	VSD	IS=0.9A,VGS=0V			1.2	V
Maximum Body-Diode Continuous Current	IS				0.9	A
Dynamic Parameters
Input Capacitance	Ciss	VDS=16V,VGS=0V,f=1MHz		46		pF
Output Capacitance	Coss			9
Reverse Transfer Capacitance	Crss			5
Switching Parameters
Turn-on Delay Time	tD(on)	VGS=4.5V,VDD=10V, ID=0.5A,RGEN=10Ω		6.7		ns
Turn-on Rise Time	tr			4.8
Turn-off Delay Time	tD(off)			17.3
Turn-off Fall Time	tf			7.4