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Manufacturing plant High Tech 150MW VC143ZME SOT-723 NPN Digital Transistor Semiconductor for Smart Devices

1.Built-in bias resistor NPN digital transistor
2.SOT-723 compact surface mount package, save PCB space
3.Simple peripheral circuit, reduce component quantity
4.Stable switching performance, reliable operation
5.Low power consumption, excellent consistency
6.Factory independent advanced design
7.Factory direct supply, accept OEM & SKD
  • VC143ZME

  • Weforsemi

  • VC143ZME

Material:
Structure:
Package Structure:
Power Grade:
Supply Voltage:
Output Current:
Power Dissipation:
Availability:
Quantity:
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Manufacturing plant High Tech 150MW VC143ZME SOT-723 NPN Digital Transistor Semiconductor for Smart Devices

FEATURES :
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making device design easy



MAXIMUM RATINGS(Ta=25ºC unless otherwise noted)

Symbol Parameter Limits Unit
VCC Supply Voltage 50 V
VIN Input Voltage -5~+30 V
IO Output Current 100 mA
PD Power Dissipation 150 mW
Tj Junction Temperature 150 ºC
Tstg Storage Temperature -55~+150 ºC


ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)

Parameter Symbol Conditions Min Typ Max Unit
Input voltage VI(off) VCC=5V,IO=100µA

0.5 V
VI(on) VO=0.3V ,IO=5mA 1.3

V
Output voltage VO(on) IO/II=5mA/0.25mA
0.1 0.3 V
Input current II VI=5V

1.8 mA
Output current IO(off) VCC=50V,VI=0

0.5 μA
DC current gain GI VO=5V,IO=10mA 80


Input resistance R1
3.29 4.7 6.11
Resistance ratio R2/R1
8 10 12
Transition frequency fT VO= 10V ,IO=5mA,f=100MHz
250
MHz

VC143ZME 1


电子元器件通用图




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