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Direct factory Advanced Design N-Channel Enhancement Mode MOSFET VC9320A-1 SOT-723 Semiconductor

1.N-Channel enhancement mode MOSFET, SOT-723 compact surface-mount package
2.High ESD capability up to 3KV (HBM), excellent anti-static performance
3.VDS 20V, continuous drain current up to 1.0A for stable switching operation
4.Miniature SOT-723 footprint, effectively saving PCB layout space
5.Reliable switching performance for consumer electronics and PCBA solutions
6.RoHS & REACH compliant, suitable for global market export
7.Strict quality control, consistent batch-to-batch performance

  • VC9320A-1

  • Weforsemi

  • VC9320A-1 SOT-723

Material:
Silicon
Structure:
Planar
Package Structure:
Plastic Sealed Transistor
Drain-Source Voltage:
20V
Gate-Source Voltage:
±10V
Continuous Drain Current:
1.0A
Power Dissipation:
0.2W
Availability:
Quantity:
Inquire Add to Basket

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Direct factory Advanced Design N-Channel Enhancement Mode MOSFET VC9320A-1 SOT-723 Semiconductor



Features
• VDS= 20V,
• ID= 1.0A
• RDS(ON) (at VGS= 4.5V) =160mΩ(Typ)
• RDS(ON) (at VGS= 2.5V) =180mΩ(Typ)
• ESD Capability (HBM): 3KV

Application
• Load Switch for Portable Devices
• Voltage controlled small signal switch

Absolute Maximum Ratings (at Ta = 25ºC unless otherwise specified)

Parameter Symbol Value Unit
Drain-Source Voltage VDS 20 V
Gate-Source Voltage VGS ±10 V
Continuous Drain Current ID 1.0 A
Peak Drain Current, Pulsed 1) IDM 4.0 A
Power Dissipation 2) Ptot 0.2 W
Operating Junction TJ 150 ºC
Storage Temperature Range Tstg -55~150 ºC

Thermal Characteristics

Parameter Symbol Max. Unit
Thermal Resistance from Junction to Ambient 2) RθJA 833 ºC/W

VC9320A_1 4


电子元器件通用图



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