Factory Direct SOT-523 150mW VC1012F ESD 2000V N-Channel MOSFET TRANSISTOR for Global Distribution
FEATURES
TrenchFET® Power MOSFET: 1.8-V Rated
Gate-Source ESD Protected: 2000V
High-side Switching
Low On-Resistance: 0.7Ω
Low Threshold: 0.8V (Typ.)
Fast Switching Speed: 10ns
S-Prefix for Automotive and Other Applications Requiring Unique Site and Control Change
Requirements
RoHS Compliant
Green EMC
Matte Tin(Sn) Lead Finish
Weight: approx. 0.002g
BENEFITS
Ease in Driving Switches
Low Offset(Error) Voltage
Low-Voltage operation
High-Speed Circuits
Low Battery Voltage Operation
APPLICATIONS
Drivers: Relays, Solenoids, Lamps, Hammers, displays, Memories
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, agers
Absolute Maximum Ratings TA = 25°C unless otherwise noted
| Symbol | Parameter | 5 secs | Steady State | Units |
| VDS | Drain-Source Voltage | 20 | V |
| VGS | Gate-Source Voltage | ±6V | V |
| ID | Continuous Drain Current e TA=25ºC TA=85ºC | 600
400 | 500
350 | mA |
| IDM | Pulsed Drain Current d | 1000 | mA |
| IS | Continuous Source Current e | 275 | 250 | mA |
| PD | Power Dissipation e TA=25ºC
TA=85ºC | 175
90 | 150
80 | mW |
| TSTG | Storage Temperature Range | -55 to +150 | °C |
| TJ | Operating Junction Temperature | +150 | °C |
| ESD | Gate-source ESD Rating (HBM, Method 3015) | 2000 | V |
