Semiconductor Ptot 350mW Vdss 60V n channel Enhancement MOSFET Transistor SOT-23 Package
VC7002HX SOT-23 Reel Packing SMD Enhancement Mode Power MOSFET Semiconductor Electronic Product Assembly Services
Features
• Low on res stance RDS(ON)
• Low gate thres old voltage
• Low input cap citance
• ESD protec ed up to 2KV
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads Absolute Maximum Ratings (Ta = 25 ºC) | Parameter | Symbol | Value | Unit |
| Drain-Source Voltage | VDSS | 60 | V |
| Gate-Source Voltage | VGSS | ± 20 | V |
| Drain Current (Continuous) | ID | 340 | mA |
| Drain Current (Pulse Width ≤ 10 µs) | IDM | 800 | mA |
| Total Power Dissipation | Ptot | 350 | mW |
| Operating and Storage Temperature Range | Tj, Tstg | - 55 to + 150 | OC |
Characteristics at T a = 25 O C | Parameter | Symbol | Min. | Max. | Unit |
Drain Source Breakdown Voltage
at ID = 10 µA | BVDSS | 60 | - | V |
Zero Gate Voltage Drain Current
at VDS = 60 V | IDSS | - | 1 | µA |
Gate Source Leakage Current
at VGS = ± 20 V | IGSS | - | ± 10 | µA |
Gate Threshold Voltage
at VDS = 10 V, ID = 250 µA | VGS(th) | 1 | 2.5 | V |
Static Drain Source On-Resistance
at VGS = 10 V, ID = 500 mA
at VGS = 4.5 V, ID = 200 mA | RDS(ON) |
-
- | 3
4 | Ω |
Forward transconductance
at VDS = 10 V, ID = 200 mA | gfs | 80 | - | mS |
Input Capacitance
at VDS = 25 V, f = 1 MHz | Ciss | - | 50 | pF |
Output Capacitance
at VDS = 25 V, f = 1 MHz | Coss | - | 25 | pF |
Reverse Transfer Capacitance
at VDS = 25 V, f = 1 MHz | Crss | - | 5 | pF |
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