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Advanced High-Tech Design 150mW SOT-523 Ultra-Small SMD NPN Transistor with Consistent Performance OEM Electronics Manufacturer

1.Ultra-small SOT-523 surface mount package, occupies less PCB space, ideal for miniaturized, portable and wearable electronic equipment
2.VC2SC4617F NPN silicon general purpose transistor, excellent small signal switching and amplification characteristics
3.Low saturation voltage, stable current gain, low power consumption during continuous operation
4.Wide operating temperature range, outstanding parameter consistency for large-scale SMT mass production
5.Factory direct supply, flexible MOQ, support OEM marking and customized packaging
6.High-tech advanced design, stable stock supply to support SKD complete machine projects
  • VC2SC4617F

  • Weforsemi

  • NPN General PurposeTransistor

Collector Power Dissipation:
Collector-Base Voltage:
Collector-Emitter Voltage:
Emitter-Base Voltage:
Collector Current - Continuous:
PACKAGE:
Availability:
Quantity:
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VC2SC4617F SOT-523 NPN General Purpose Transistor For Small Signal Amplification & Switching

Advanced High-Tech Design 150mW SOT-523 Ultra-Small SMD NPN Transistor with Consistent Performance OEM Electronics Manufacturer

FEATURES:
NPN TRANSISTOR
SOT-523 150mW

Absolute Maximum Ratings    TA  = 25°C unless otherwise noted
  • Pc (Collector Power Dissipation): 150 mW

  • Tstg (Storage Temperature Range): -55 to +150 ºC

  • Tj (Operating Junction Temperature): +150 ºC

  • VCBO (Collector-Base Voltage): 50 V

  • VCEO (Collector-Emitter Voltage): 50 V

  • VEBO (Emitter-Base Voltage): 5 V

  • Ic (Collector Current - Continuous): 100 mA

Electrical Characteristics         TA  = 25°C unless otherwise noted
Symbol Parameter Test Condition Limits Unit
Min TYP Max
V(BR)CBO Collector-Base Breakdown Voltage IC=50uA, IE=0A 50

Volts
V(BR)CEO Collector-Emitter Breakdown Voltage IC=1mA, IB=0A 50

Volts
V(BR)EBO Emitter-Base Breakdown Voltage IE=50uA, IC=0A 5

Volts
ICBO Collector Cut-off Current VCB=50V, IE=0A

0.1 µA
IEBO Emitter Cut-off Current VEB=5V, IC=0A

0.1 µA
hFE DC Current Gain VCE=6V, IC=1mA 120
560 ---
VCE(sat) Collector-Emitter Saturation Voltage IC=50mA, IB=5mA

0.4 Volts
fT Transition Frequency VCE   =5V,   IC=10mA f=30MHz
280
MHz
COB Collector Output Capacitance VCB   =12V,   IE    =0A, f=1MHz
2.0
pF



VC2SC4617FVC2SC4617F 1


电子元器件通用图


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