VC2SC4617F
Weforsemi
NPN General PurposeTransistor
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| Collector-Emitter Voltage: | |
| Emitter-Base Voltage: | |
| Collector Current - Continuous: | |
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VC2SC4617F SOT-523 NPN General Purpose Transistor For Small Signal Amplification & Switching
Advanced High-Tech Design 150mW SOT-523 Ultra-Small SMD NPN Transistor with Consistent Performance OEM Electronics Manufacturer
Pc (Collector Power Dissipation): 150 mW
Tstg (Storage Temperature Range): -55 to +150 ºC
Tj (Operating Junction Temperature): +150 ºC
VCBO (Collector-Base Voltage): 50 V
VCEO (Collector-Emitter Voltage): 50 V
VEBO (Emitter-Base Voltage): 5 V
Ic (Collector Current - Continuous): 100 mA
| Symbol | Parameter | Test Condition | Limits | Unit | ||
| Min | TYP | Max | ||||
| V(BR)CBO | Collector-Base Breakdown Voltage | IC=50uA, IE=0A | 50 | Volts | ||
| V(BR)CEO | Collector-Emitter Breakdown Voltage | IC=1mA, IB=0A | 50 | Volts | ||
| V(BR)EBO | Emitter-Base Breakdown Voltage | IE=50uA, IC=0A | 5 | Volts | ||
| ICBO | Collector Cut-off Current | VCB=50V, IE=0A | 0.1 | µA | ||
| IEBO | Emitter Cut-off Current | VEB=5V, IC=0A | 0.1 | µA | ||
| hFE | DC Current Gain | VCE=6V, IC=1mA | 120 | 560 | --- | |
| VCE(sat) | Collector-Emitter Saturation Voltage | IC=50mA, IB=5mA | 0.4 | Volts | ||
| fT | Transition Frequency | VCE =5V, IC=10mA f=30MHz | 280 | MHz | ||
| COB | Collector Output Capacitance | VCB =12V, IE =0A, f=1MHz | 2.0 | pF | ||



