Introducing the Exclusive Patent NPN Silicon VC3904TB SOT-523 NPN Transistor - an innovative marvel in Consumer Electronics, crafted with precision and advanced technology to meet your high-performance demands.
We are a Professional Manufacturer of the VC3904TB NPN Transistor in the SOT-523 package, welcoming Custom OEM Bulk Orders tailored to your specific business needs.
Original Electronic Component Manufacturer SOT-523 VC3904TB NPN Transistor SMD BJT Semiconductor ODM Electronics Solutions
FEATURES
This transistor is Complementary to the VC3906TB, offering seamless compatibility and enhanced functionality in your electronic projects.
Compact in design, the Small Package ensures space efficiency without compromising on performance, ideal for modern electronic devices.
MAXIMUM RATINGS (Ta=25ºC unless otherwise noted
VCBO (Collector-Base Voltage): 60 V, providing robust voltage handling capabilities.
VCEO (Collector-Emitter Voltage): 40 V, ensuring reliable emitter voltage performance.
VEBO (Emitter-Base Voltage): 6 V, tailored for optimal emitter to base voltage levels.
IC (Collector Current): 200 mA, supporting high current flow for demanding applications.
PC (Collector Power Dissipation): 150 mW, allowing efficient power dissipation.
RθJA (Thermal Resistance From Junction To Ambient): 833 ºC/W, designed for effective thermal management.
Tj (Junction Temperature): 150 ºC, offering high-temperature endurance.
Tstg (Storage Temperature): -55 ~ +150 ºC, ensuring safe and wide temperature storage range.
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC=10µA, IE=0 | 60 |
|
| V |
| Collector-emitter breakdown voltage | V(BR)CEO | IC=1mA, IB=0 | 40 |
|
| V |
| Emitter-base breakdown voltage | V(BR)EBO | IE=10µA, IC=0 | 6 |
|
| V |
| Collector cut-off current | ICEX | VCE=30V, VEB(off)=3V |
|
| 50 | nA |
| Emitter cut-off current | IEBO | VEB=5V, IC=0 |
|
| 100 | nA |
| DC current gain | hFE(1) | VCE=1V, IC=0.1mA | 40 |
|
|
|
| hFE(2) | VCE=1V, IC=1mA | 70 |
|
|
|
| hFE(3) | VCE=1V, IC=10mA | 100 |
| 300 |
|
| hFE(4) | VCE=1V, IC=50mA | 60 |
|
|
|
| Collector-emitter saturation voltage | VCE(sat) | IC=10mA, IB=1mA |
|
| 0.2 | V |
| IC=50mA, IB=5mA |
|
| 0.3 | V |
| Collector-emitter saturation voltage | VBE(sat) | IC=10mA, IB=1mA | 0.65 |
| 0.85 | V |
| IC=50mA, IB=5mA |
|
| 0.95 | V |
| Transition frequency | fT | VCE=20V,IC=10mA, f=100MHz | 300 |
|
| MHz |
| Collector output capacitance | Cob | VCB=5V, IE=0, f=1MHz |
|
| 4 | pF |
| Base input capacitance | Cib | VEB=0.5V, IC=0, f=1MHz |
|
| 8 | pF |
| Delay time | td | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA |
|
| 35 | ns |
| Rise time | tr | VCC=3V, VBE(off)=-0.5V IC=10mA, IB1=1mA |
|
| 35 | ns |
| Storage time | ts | VCC=3V, IC=10mA, IB1= IB2=1mA |
|
| 200 | ns |
| Fall time | tf | VCC=3V, IC=10mA, IB1= IB2=1mA |
|
| 50 | ns |
