High Performance IFSM 0.5A VC521S6-30X 2-Pin DFNWB0603 Schottky Diode for Fast Switching Semiconductor
FEATURE
Small surface mounting type
Low reverse current and low forward voltage
High reliability
APPLICATION
High speed switching for detection
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, notebook PC, etc.)
MAXIMUM RATINGS (Ta=25ºC unless otherwise noted)
Repetitive Peak Reverse Voltage:30V
Working Peak Reverse Voltage:30V
RMS Reverse Voltage:21V
Average Rectified Output Current:100mA,
Non-Repetitive Peak Forward Surge Current@ t=8.3ms:0.5A
Power Dissipation:100mW,
Thermal Resistance from Junction to Ambient:1000ºC/W
Junction temperature:125ºC,
Storage Temperature: -55~+150ºC
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise)
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Reverse breakdown voltage | V(BR) | IR=50μA | 30 |
|
| V |
Reverse current
|
IR
| VR=10V |
| 0.15 | 2 | μA |
| VR=30V |
| 0.75 | 10 | μA |
Forward voltage
|
VF
| IF=10mA |
|
| 0.45 | V |
| IF=100mA |
| 0.5 | 0.8 | V |
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customer product design. Weforsemi does not warrant or accept any liability for products which are purchased or used for any unintended or unauthorized application.
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Weforsemi products are not authorized for use as critical components in life support devices or systems without express written approval of Weforsemi .
