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Home » Products » Transistors / Discrete Semiconductors » TVS Diodes (Transient Voltage Suppressors) » DFN0603-2L(0201) Semiconductor Manufacturer VCTB5V0P215YW ESD Diodes SMD Electronic Component Tvs Diode

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DFN0603-2L(0201) Semiconductor Manufacturer VCTB5V0P215YW ESD Diodes SMD Electronic Component Tvs Diode

DFN0603-2L(0201) Semiconductor Manufacturer VCTB5V0P215YW ESD Diodes SMD Electronic Component Tvs Diode

1.Exclusive Patent DFN0603-2L Mini TVS Diode

2.Factory Direct, OEM & SKD Customizable

3.High-tech Advanced Surge Protection Design

4.Tiny 0201 Size Save PCB Space

5.Reliable 5V Bidirectional ESD Protection

6.Low Leakage, Ideal for Portable Devices

7.Stable Performance, Strict Factory QC

8.Fast Mass Production Lead Time, Many Models in stock

9.RoHS & REACH Compliant, Lead-Free Eco-Friendly Material

10.Excellent Suppression Capability Against Transient Voltage Pulse

Model:
VCTB5V0P215YW
Brand:
Weforsemi
Code:
TVS Diode

Quantity:
Feature1:	DFN0603-2L package
Feature2:	Replacement for MLV(0201)
Feature3:	Bidirectional configurations
Feature4:	Response time is typically < 1 ns
Applications1:	Cellular phones
Applications2:	Portable devices
Applications3:	Digital cameras
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Product Description

DFN0603-2L(0201) Semiconductor Manufacturer VCTB5V0P215YW ESD Diodes SMD Electronic Component Tvs Diode

Product Description

Description

The VCTB5V0P215YW protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time and low operating voltage. It gives designers the flexibility to protect one unidirectional line in applications where arrays are not practical.

Feature
DFN0603-2L package
Replacement for MLV(0201)
Bidirectional configurations
Response time is typically < 1 ns
Low clamping voltage
RoHS compliant
Transient protection for data lines to
IEC 61000-4-2(ESD) ±30KV(air), ±30KV(contact); IEC 61000-4-4 (EFT) 40A (5/50ns)

Applications
Cellular phones
Portable devices
Digital cameras
Power supplies

Mechanical Characteristics
Mounting position: Any
Qualified max reflow temperature:260ºC
Device meets MSL 1 requirements
DFN0603-2L without plating

Electrical characteristics per line@25ºC( unless otherwise specified)

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Units
Peak Reverse Working Voltage	VRWM				5.0	V
Breakdown Voltage	VBR	It = 1mA	5.6			V
Reverse Leakage Current	IR	VRWM = 5V T=25ºC			1	μA
Clamping Voltage	VCL	IPP=16A tp=100ns		27		V
Clamping Voltage	VC	IPP = 1A tP = 8/20μs		11	13	V
Clamping Voltage	VC	IPP = 5.5A tP = 8/20μs		21	23	V
Junction Capacitance	Cj	VR=0V f = 1MHz		0.25	0.32	pF