High-Performance OEM VC5819THX SOD-523 SMD Schottky Diode for Electronics Semiconductor Production factory
Features :
Low Forward Voltage Drop
Guard Ring Construction for Transient Protection
Low Reverse Recover Time
Low Reverse Capacitance
Marking: S4
Maxium Ratings (Ta=25ºC unless otherwise noted)
Reverse Voltage: VRWM=40V, VR(RMS)=28V
Forward Current: IO=350mA, IFRM=0.35A, IFSM=2A (≤8.3ms half sine wave)
Power & Thermal: Pd=150mW, RθJA=667ºC/mW, Max junction temp 125ºC
Storage Temperature: -55ºC ~ 150ºC
Electrical Characteristics (Ta=25ºC )
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Reverse Voltage | V(BR) | IR=100 uA | 40 |
|
| V |
| Reverse current | IR | VR=30V |
|
| 5 | uA |
| VR=20V |
|
| 2 |
| VR=30V |
|
| 5 |
Forward Voltage |
VF | IF=1mA |
| 0.27 |
|
V |
| IF=5mA |
| 0.32 |
|
| IF=20mA |
|
| 0.37 |
| IF=200mA |
|
| 0.6 |
| Diode Capacitance | CD | VR=4V,f=1.0MHz |
| 50 |
| pF |
| Recover Reverse Time | trr | IF=IR=200mA,Irr=0.1×IR,RL=100Ω |
| 10 |
| nS |
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