VC1N5819WSB
Weforsemi
SMD Schottky Barrier Diode
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Wholesale 450mW SOD-323 SMD Surface Mount Schottky Diode Semiconductor with Exclusive Patent
PIN DESCRIPTION
PIN1:Cathode
PIN2:Anode

Absolute Maximum Ratings (Ta = 25 ºC)
Characteristics at T = 25ºC
| Parameter | Symbol | Min. | Max. | Unit | |
| Reverse Breakdown Voltage at IR = 1 mA | VC1N5817WSB VC1N5818WSB VC1N5819WSB | V(BR)R | 20 30 40 | - - - | V |
| Forward Voltage at IF = 1 A at IF = 3 A | VC1N5817WSB VC1N5818WSB VC1N5819WSB VC1N5817WSB VC1N5818WSB VC1N5819WSB | VF | - - - - - - | 0.45 0.55 0.6 0.75 0.875 0.9 | V |
| Reverse Voltage Leakage Current at VR = 20 V at VR = 30 V at VR = 40 V | VC1N5817WSB VC1N5818WSB VC1N5819WSB | IR | - - - | 1 1 1 | mA |
| Total Capacitance at VR = 4 V, f = 1 MHz | Ctot | - | 120 | pF | |
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