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Premium Quality SMD Fast Switching Diode Vr 75V Ifav 150mA Fetures Applications SOD123 Electronic Components

Direct Factory SMD Switching Diode 150mA VC1N4148WB SOD-123 Fast Recovery Signal Diode Integrated Circuit

Premium Quality SMD Fast Switching Diode Vr 75V Ifav 150mA Fetures Applications SOD123 Electronic Components

1.Silicon epitaxial planar chip, excellent high‑speed switching performance

2.Fast reverse recovery time: max 4ns, ideal for high‑frequency signal switching

3.Low junction capacitance, little signal distortion for high‑speed circuits

4.Compact SOD‑123 surface‑mount package, suitable for SMT automatic assembly, save PCB space

5.Stable forward voltage characteristic, low power consumption

6.High surge current resistance, reliable for general‑purpose signal switching

7.RoHS & REACH compliant, halogen‑free green product

8.Wide operating temperature range:‑55℃ ~ +150℃

Model:
VC1N4148WB
Brand:
Weforsemi
Code:
Fast Switching Diode

Quantity:
Max Forward Current:	150mA
Max Reverse Current:	1uA
Max Reverse Voltage:	75V
Type:	Silicon Epitaxial Planar Switching Diode
Specification:	Plastic surface mounted package
Package:	SOD‑123
Temperature Range:	-55~+150℃
Availability:





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Product Description

Premium Quality SMD Fast Switching Diode Vr 75V Ifav 150mA Fetures Applications SOD123 Electronic Components

Features

SOD-123 package

Fast switching

1.Plastic surface mounted package:2 leads
2. IF(AV )=150mA
3.IR=1uA
4.VR=75V

PIN DESCRIPTION
1.Cathode
2.Anode

Application Fields
1. Power Supply Equipment
2. Telecommunication Equipment
3. Consumer Electronic Products
4. Industrial Control & Instrumentation
5. General Logic & Protection Circuits
6. Vehicle Electronics

Product Specification
1.Absolute Maximum Ratings (Ta = 25ºC)

Parameter	Symbol	Value	Unit
Peak Reverse Voltage	VRM	100	V
Reverse Voltage	VR	75	V
Average Rectified Forward Current	IF(AV)	150	mA
Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs	IFSM	0.5 1 4	A
Power Dissipation	Ptot	400	mW
Thermal Resistance from Junction to Ambient Air	RθJA	312	ºC/W
Junction Temperature	Tj	- 55 to + 150	ºC
Storage Temperature Range	Tstg	- 55 to + 150	ºC

2.Characteristics at Ta = 25ºC

Parameter	Symbol	Min.	Max.	Unit
Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA	VF	- - - -	0.715 0.855 1 1.25	V
Peak Reverse Current at VR = 75 V at VR = 20 V at VR = 75 V, TJ = 150ºC at VR = 25 V, TJ = 150ºC	IR	- - - -	1 25 50 30	µA nA µA µA
Total Capacitance at VR = 0 V, f = 1 MHz	CT	-	2	pF
Reverse Recovery Time at Irr = 0.1 X IR, IF = IR = 10 mA, RL = 100 Ω	trr	-	4	ns