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Direct Factory SMD Switching Diode 150mA VC1N4148WB SOD-123 Fast Recovery Signal Diode Integrated Circuit

1.Silicon epitaxial planar chip, excellent high‑speed switching performance
2.Fast reverse recovery time: max 4ns, ideal for high‑frequency signal switching
3.Low junction capacitance, little signal distortion for high‑speed circuits
4.Compact SOD‑123 surface‑mount package, suitable for SMT automatic assembly, save PCB space
5.Stable forward voltage characteristic, low power consumption
6.High surge current resistance, reliable for general‑purpose signal switching
7.RoHS & REACH compliant, halogen‑free green product
8.Wide operating temperature range:‑55℃ ~ +150℃
 

  • VC1N4148WB

  • Weforsemi

  • VC1N4148WB

Max Forward Current:
150mA
Max Reverse Current:
1uA
Max Reverse Voltage:
75V
Type:
Silicon Epitaxial Planar Switching Diode
Specification:
Plastic surface mounted package
Package:
SOD‑123
Temperature Range:
-55~+150℃
Availability:
Quantity:
Inquire Add to Basket

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Direct Factory SMD Switching Diode 150mA VC1N4148WB  SOD-123 Fast Recovery Signal Diode Integrated Circuit

Features 

 SOD-123 package 

 Fast switching

1.Plastic surface mounted package:2 leads
2. IF(AV )=150mA
3.IR=1uA
4.VR=75V


PIN  DESCRIPTION
1.Cathode
2.Anode


Application Fields
1. Power Supply Equipment
2. Telecommunication Equipment
3. Consumer Electronic Products
4. Industrial Control & Instrumentation
5. General Logic & Protection Circuits
6. Vehicle Electronics


Product Specification
1.Absolute Maximum Ratings (Ta  = 25ºC)

Parameter Symbol Value Unit
Peak Reverse Voltage VRM 100 V
Reverse Voltage VR 75 V
Average Rectified Forward Current IF(AV) 150 mA
Non-repetitive Peak Forward Surge Current          at t = 1 s  at t = 1 ms
at t = 1 μs		 IFSM 0.5
1
4		 A
Power Dissipation Ptot 400 mW
Thermal Resistance from Junction to Ambient Air RθJA 312 ºC/W
Junction Temperature Tj - 55 to + 150 ºC
Storage Temperature Range Tstg - 55 to + 150 ºC


2.Characteristics at Ta = 25ºC

Parameter Symbol Min. Max. Unit
Forward Voltage
at IF  = 1 mA
at IF  = 10 mA
at IF  = 50 mA
at IF  = 150 mA

VF
-
-
-
-		 0.715
0.855
1
1.25

V
Peak Reverse Current
at VR  = 75 V
at VR  = 20 V
at VR  = 75 V, TJ  = 150ºC
at VR  = 25 V, TJ = 150ºC
IR
-
-
-
-		 1
25
50
30		 µA
nA
µA
µA
Total Capacitance
at VR  = 0 V, f = 1 MHz		 CT - 2 pF
Reverse Recovery Time
at Irr = 0.1 X IR, IF = IR  = 10 mA, RL = 100 Ω		 trr - 4 ns

 


VC1N4148WB 1



电子元器件通用图


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