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Product Category

1.Fast switching performance for high speed signal circuit application

2.MiniMELF compact package, ideal for automatic SMT surface mounting

3.Stable electrical characteristics under 25degree operating temperature

4.Strict absolute maximum ratings ensure reliable working performance

5.Excellent batch consistency for large volume mass production

6.Factory direct supply, support OEM marking and customized packaging

7.Wide application for consumer electronics and industrial control projects

Quantity:
Package Structure:	Glass Sealed Transistor
Application:	Electronic Products
Material:	Silicon
Structure:	Planar
Peak Reverse Voltage:	100V
Reverse Voltage:	75 V
Average Rectified Forward Current:	200mA
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Fast Switching Diode Semiconductor Manufacturer High Speed Signal Circuit Application Electronic Components

Feature

Fast switching diode in MiniMELF case especially suited for automatic surface mounting

Absolute Maximum Ratings (Ta = 25℃)

Parameter	Symbol	Value	Unit
Peak Reverse Voltage	VRM	100	V
Reverse Voltage	VR	75	V
Average Rectified Forward Current	IF(AV)	200	mA
Non-repetitive Peak Forward Surge Current at t = 1 s at t = 1 ms at t = 1 μs	IFSM	0.5 1 4	A
Power Dissipation	Ptot	500 1)	mW
Ju nction Temperature	Tj	175	℃
Storage Temperature Range	Tstg	- 65 to + 175	℃

Characteristics at T = 25 ℃

Parameter	Symbol	Min.e	Max.	Unit
Forward Voltage at IF = 10 mA	VF	-	1	V
Leakage Current
at VR = 20 V	IR	-	25	nA
at VR = 75 V	IR	-	5	µA
	IR	-	50	µA
Reverse Breakdown Voltage tested with 100 µA Pulses	V(BR)R	100	-	V
Capacitance at VR = 0, f = 1 MHz	Ctot	-	4	pF
Voltage Rise when Switching ON tested with 50 mA Forward Pulses tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz	Vfr	-	2.5	V
Reverse Recovery Time at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100 Ω	trr	-	4	ns
Thermal Resistance Junction to Ambient Air	RthA	-	0.3 1)5	K/mW
Rectification Efficiency at f = 100 MHz, VRF = 2 V	ηV	- 0.45		-

LL-34 (11)

电子元器件通用图