Products

SUPPORTING GLOBAL CUSTOMERS WITH COMPONENT SOURCING, ENGINEERING SUPPORT AND CUSTOMIZED ELECTRONIC SOLUTIONS

Home » Products » Transistors / Discrete Semiconductors » Digital Transistors / Pre-biased Transistors » Semiconductor Factory SOT-723 Digital Transistor NPN 150MW Electronic Component Electronics Manufacturing Partner

Product Category

Semiconductor Factory SOT-723 Digital Transistor NPN 150MW Electronic Component Electronics Manufacturing Partner

Manufacturing plant High Tech 150MW VC143ZME SOT-723 NPN Digital Transistor Semiconductor for Smart Devices

Semiconductor Factory SOT-723 Digital Transistor NPN 150MW Electronic Component Electronics Manufacturing Partner

1.Built-in bias resistor NPN digital transistor

2.SOT-723 compact surface mount package, save PCB space

3.Simple peripheral circuit, reduce component quantity

4.Stable switching performance, reliable operation

5.Low power consumption, excellent consistency

6.Factory independent advanced design

7.Factory direct supply, accept OEM & SKD

Model:
VC143ZME
Brand:
Weforsemi
Code:
VC143ZME

Quantity:
Material:	Silicon
Structure:	NPN
Package Structure:	Plastic Sealed Transistor
Power Grade:	Small Power
Supply Voltage:	50V
Output Current:	100mA
Power Dissipation:	150MW
Availability:





Inquire Add to Basket

Product Description

Semiconductor Factory SOT-723 Digital Transistor NPN 150MW Electronic Component Electronics Manufacturing Partner

FEATURES :
Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)
The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input.They also have the advantage of almost completely eliminating parasitic effects
Only the on/off conditions need to be set for operation, making device design easy

MAXIMUM RATINGS(Ta=25ºC unless otherwise noted)

Symbol	Parameter	Limits	Unit
VCC	Supply Voltage	50	V
VIN	Input Voltage	-5~+30	V
IO	Output Current	100	mA
PD	Power Dissipation	150	mW
Tj	Junction Temperature	150	ºC
Tstg	Storage Temperature	-55~+150	ºC

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless otherwise specified)

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Input voltage	VI(off)	VCC=5V,IO=100µA			0.5	V
Input voltage	VI(on)	VO=0.3V ,IO=5mA	1.3			V
Output voltage	VO(on)	IO/II=5mA/0.25mA		0.1	0.3	V
Input current	II	VI=5V			1.8	mA
Output current	IO(off)	VCC=50V,VI=0			0.5	μA
DC current gain	GI	VO=5V,IO=10mA	80
Input resistance	R1		3.29	4.7	6.11	kΩ
Resistance ratio	R2/R1		8	10	12
Transition frequency	fT	VO= 10V ,IO=5mA,f=100MHz		250		MHz