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Professional Semiconductor Manufacturer 0.3W VC8050TMT NPN Transistor Sot-523 Package Electronic Manufacturing Solutions

Professional Semiconductor Manufacturer 0.3W VC8050TMT NPN Transistor Sot-523 Package Electronic Manufacturing Solutions

1.Ultra-small SOT-523 surface mount package, effectively save PCB space, perfect for compact, portable and miniaturized electronic products

2.VC8050TMT NPN silicon general-purpose transistor, excellent performance for signal switching and small signal amplification

3.Low saturation voltage, stable current gain, reliable continuous working performance

4.Factory direct supply, flexible MOQ, support OEM marking and customized packaging

5.High-tech advanced design, stable stock to support SKD complete machine cooperation

6.Strict parameter screening with tight tolerance, long-term operational stability

Model:
VC8050TMT
Brand:
Weforsemi/Haiben
Code:
TRANSISTOR (NPN)

Quantity:
Collector-Base Voltage:	40V
Collector-Emitter Voltage:	25V
Emitter-Base Voltage:	5V
Collector Current -Continuous:	0.5A
Collector Dissipation:	0.3W
Model:	TRANSISTOR (NPN)
PACKAGE:	SOT-523
Availability:





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Product Description

Professional Semiconductor Manufacturer VC8050TMT NPN Transistor SOT-523 package

Product Description

FEATURES

Complimentary to VC8550TMT

Collector Current: IC=0.5A

MAXIMUM RATINGS (TA=25ºC unless otherwise noted)

VCBO Collector-Base Voltage: 40 V
VCEO Collector-Emitter Voltage: 25 V
VEBO Emitter-Base Voltage: 5 V
IC Collector Current -Continuous : 0.5 A
PC Collector Dissipation: 0.3 W
Tj Junction Temperature: 150 ºC
Tstg Storage Temperature: -55-150 ºC

ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless otherwise specified)

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	IC= 100µA, IE=0	40			V
Collector-emitter breakdown voltage	V(BR)CEO	IC=1mA, IB=0	25			V
Emitter-base breakdown voltage	V(BR)EBO	IE=100µA, IC=0	5			V
Collector cut-off current	ICBO	VCB=40 V, IE=0			0.1	µA
Collector cut-off current	ICEO	VCE=20V, IE=0			0.1	µA
Emitter cut-off current	IEBO	VEB= 5V, IC=0			0.1	µA
DC current gain	HFE(1)	VCE=1V, IC= 50mA	120		400
DC current gain	HFE(2)	VCE=1V, IC= 500mA	50
Collector-emitter saturation voltage	VCE(sat)	IC=500 mA, IB= 50mA			0.6	V
Base-emitter saturation voltage	VBE(sat)	IC=500 mA, IB= 50mA			1.2	V
Transition frequency	fT	VCE=6V, IC= 20mA f=30MHz	150			MHz