PN557A1EV-C101Y.pngBGU7258 (2).pngBGU7224 (2).pngBAV70 (2).png
BAV70 High-speed switching double diode
1. General descriptionHigh-speed switching double diode, encapsulated in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.2. Features and benefits• High switching speed: trr ≤ 4 ns• Low capacitance: Cd ≤ 1.5 pF• Low leakage current• Reverse voltage: VR ≤ 100 V• Small SMD plastic package3. Applications• High-speed switching• General-purpose switching4. Quick reference dataTable 1. Quick reference dataSymbol Parameter Conditions Min Typ Max UnitPer diodeIR reverse current VR = 80 V; Tamb = 25 °C - - 0.5 µA VR reverse voltage - - 100 V trr reverse recovery time IF = 10 mA; IR = 10 mA; IR(meas) = 1 mA; - - 4 ns
BGU7224 General description
The BGU7224 is a fully integrated MMIC Low Noise Amplifier (LNA) for wireless receiverapplications in the 2.4 GHz to 2.5 GHz ISM band. Manufactured in NXP's highperformance SiGe:C technology, the BGU7224 couples best-in-class gain, noise figure,linearity and efficiency with the process stability and ruggedness that are the hallmarks ofSiGe technology. The BGU7224 features a robust temperature-compensated internal biasnetwork and an integral bypass / shutdown feature that stabilizes the DC operating pointover temperature and enables operation in the presence of high input signals, whileminimizing current consumption in bypass (standby) mode. The 1.6 mm x 1.6 mmfootprint coupled with only two external component, makes the circuit boardimplementation of the BGU7224 the smallest IEEE 802.11b/g/n (including 256 QAMenabling "802. 11n turbo") LNA with bypass solution on the market, ideal for spacesensitive applications.
1.2 Features and benefits
IEEE 802. 11b/g/n WiFi, WLAN (including 256 QAM enabling "802.11n turbo")
Fully integrated, high performance LNA with built-in bypass
Integrated DC blocking at RF input and RF output, with only one external component
needed.
Low 1.0 dB noise figure with 13 mA current consumption
Low bypass current of 2 uA (typical)
Single supply 3.0 V to 3.6 V operation
Integrated, temperature stabilized bias network
Integrated concurrent 5 GHz notch filterHigh IP3; and low EVMHigh ESD protection of 2 kV (HBM) on all pins
Small, 0.5 mm pitch, 1.6 x 1.6 x 0.5 mm QFN-style package, MSL 1 at 260 °C
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS) following NXP's RHF-2006 indicator D (dark green)
1.3 Applications
IEEE 802.11b/g/n WiFi, WLAN
BluetoothIEEE 802.15.4 PAN
Smartphones, tablets, netbooks and
other portable computing devices
Access points, routers, gateways
Wireless video
General purpose ISM applications
BGU7258
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
Rev. 3-29 August 2018
Product data sheet
Product profile
1.1 General description
The BGU7258 is a fully integrated MMIC Low Noise Amplifier (LNA) for wireless receiverapplications in the 5 GHz to 6 GHz ISM band. Manufactured in NXPs high performanceSiGe:C technology, the BGU7258 couples best-in-class gain, noise figure, linearityand efficiency with the process stability and ruggedness that are the hallmarks of SiGetechnology. The BGU7258 features a robust temperature-compensated internal biasnetwork and an integral bypass / shutdown feature that stabilizes the DC operatingpoint over temperature and enables operation in the presence of high input signalswhile minimizing current consumption in bypass (standby) mode. The 1.6 mm x 1.6mm footprint coupled with only two external components, makes the circuit boardimplementation of the BGU7258 LNA the smallest IEEE 802.11ac LNA with bypasssolution on the market, ideal for space sensitive applications.
1.2 Features and benefits
Fully integrated, high performance LNA with built-in bypass
Integrated DC blocking at RF input and RF output, with only two external components
needed.
Low 1.6 dB noise figure with 13 mA current consumption
Low bypass current of 1 uA (typical)
Single supply 3.0 V to 3.6 V operation
Integrated concurrent 2.4 GHz notch filter and temperature stabilized bias network
High IP3; and low EVM
· High ESD protection of 2 kV (HBM) on all pins
Small, 0.5 mm pitch, 1.6 x 1.6 x 0.5 mm QFN-style package, MSL 1 at 260 °C
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS) following NXPs RHF-2006 indicator D (dark green)
1.3 Applications
IEEE 802.11a/n/ac WiFi, WLAN
Smartphones, tablets, net-books, and other portable computing devices
Access points, routers, gateways
Wireless video
· LTE advanced in unlicensed spectrum (LTE-U)
· General-purpose ISM applications
BGU7258
5 GHz ISM SiGe:C low-noise amplifier MMIC with bypass
Rev. 3-29 August 2018
Product data sheet
Product profile
1.1 General description
The BGU7258 is a fully integrated MMIC Low Noise Amplifier (LNA) for wireless receiverapplications in the 5 GHz to 6 GHz ISM band. Manufactured in NXPs high performanceSiGe:C technology, the BGU7258 couples best-in-class gain, noise figure, linearityand efficiency with the process stability and ruggedness that are the hallmarks of SiGetechnology. The BGU7258 features a robust temperature-compensated internal biasnetwork and an integral bypass / shutdown feature that stabilizes the DC operatingpoint over temperature and enables operation in the presence of high input signalswhile minimizing current consumption in bypass (standby) mode. The 1.6 mm x 1.6mm footprint coupled with only two external components, makes the circuit boardimplementation of the BGU7258 LNA the smallest IEEE 802.11ac LNA with bypasssolution on the market, ideal for space sensitive applications.
1.2 Features and benefits
Fully integrated, high performance LNA with built-in bypass
Integrated DC blocking at RF input and RF output, with only two external components
needed.
Low 1.6 dB noise figure with 13 mA current consumption
Low bypass current of 1 uA (typical)
Single supply 3.0 V to 3.6 V operation
Integrated concurrent 2.4 GHz notch filter and temperature stabilized bias network
High IP3; and low EVM
· High ESD protection of 2 kV (HBM) on all pins
Small, 0.5 mm pitch, 1.6 x 1.6 x 0.5 mm QFN-style package, MSL 1 at 260 °C
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS) following NXPs RHF-2006 indicator D (dark green)
1.3 Applications
IEEE 802.11a/n/ac WiFi, WLAN
Smartphones, tablets, net-books, and other portable computing devices
Access points, routers, gateways
Wireless video
· LTE advanced in unlicensed spectrum (LTE-U)
· General-purpose ISM applications
