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Home » Products » Transistors / Discrete Semiconductors » Switching Diodes » High-Tech Fast Switching Diode Semiconductor VC1N4148WTB SOD-523 100V Wholesale From China Factory Original manufacturer
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High-Tech Fast Switching Diode Semiconductor VC1N4148WTB SOD-523 100V Wholesale From China Factory Original manufacturer

1.Low reverse leakage current, low static power consumption for battery-powered mini electronics
2.75V repetitive peak reverse voltage, average forward current 150mA, universal replacement for classic 1N4148 solution
3.Ultra-compact SOD-523 SMD package, save PCB space for miniaturized product design
4.Factory direct supply, support OEM marking customization & SKD solution service
5.Available in tape & reel packaging (3000pcs/reel), stable stock & fast lead time
  • VC1N4148WTB

  • Weforsemi

  • SOD-523 Switching Diode

Maximum Forward Current:
Maximum Reverse Current:
Maximum Reverse Voltage:
Type:
Reverse Voltage:
Average Rectified Forward Current:
Forward Continuous Current:
Availability:
Quantity:
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High-Tech Fast Switching Diode Semiconductor VC1N4148WTB SOD-523 100V Wholesale From China Factory Original manufacturer

Product Description

Features
• Fast switching speed
• Ultra-small surface mount package
• For general purpose switching applications
• High conductance

Marking Code: T4        

PACKAGE OUTLINE

Plastic surface mounted package: 2 leads  

Absolute Maximum Ratings (Ta  = 25°C)

Parameter Symbol Value Unit
Non-Repetitive Peak Reverse Voltage VRM 100 V
Reverse Voltage VR 100 V
Average Rectified Forward Current IF(AV) 150 mA
Forward Continuous Current IFM 300 mA
Power Dissipation Ptot 150 mW
Thermal Resistance Junction to Ambient Air Reja 833 ºC/W
Operating Temperature Range Tj - 65 to + 150 ºC
Storage Temperature Range Tstg - 65 to + 150 ºC


Characteristics at Ta = 25 °C

Parameter Symbol Min. Max. Unit
Reverse Breakdown Voltage
at IR = 1 µA
V(BR)R 100 - V
Forward Voltage
at IF = 1 mA
at IF = 10 mA
at IF = 50 mA
at IF = 150 mA

VF

-
-
-
-
0.715
0.855
1
1.25

V
Peak Reverse Current
at VR = 75 V
at VR  = 20 V
at VR = 75 V, TJ = 150 OC
at VR = 25 V, TJ = 150 OC

IR

-
-
-
-
1
25
50
30
µA
nA
µA
µA
Total Capacitance
at VR = 0 V, f = 1 MHz
CT - 2 pF
Reverse Recovery Time
at Irr = 0.1 X IR, IF = IR  = 10 mA, RL = 100 Ω
trr - 4 ns

Important Notice and Disclaimer
Weforsemi reserves the right to make changes to this document and its products and specifications at any time without notice. Customers should obtain and confirm the latest product information and  specifications before final design, purchase, or use.
Weforsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Weforsemi  assume any liability for application assistance or
customer product design. Weforsemi does not warrant or accept any liability for products which are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of Weforsemi .
Weforsemi  products are not authorized for use as critical components in life support devices or systems without express written approval of Weforsemi .


VC1N4148WTB 2VC1N4148WTB 1SOD-523 10SOD-523 1

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