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Home » Products » Transistors / Discrete Semiconductors » TVS Diodes (Transient Voltage Suppressors) » Low Capacitance DFN1610-2L VCTU7V550F3S TVS Diode 7V Voltage Limiter Electronic Component Semiconductor

Product Category

1.TVS ESD Protection Diode VCTU7V550F3S, ultra-compact DFN1610-2L surface-mount package

2.Ultra-fast response time, quickly suppress ESD and transient surge voltage for sensitive IC

3.Low clamping voltage, effectively protect I/O ports and signal circuits from electrostatic damage

4.Small DFN1610-2L footprint, save valuable PCB space for miniaturized electronic products

5.China factory supply, support OEM & SKD customization service for mass-production projects

Quantity:
Material:	Silicon
Structure:	Planar
Package Structure:	DFN Plastic SMD Packaged Tvs Diode
Working Frequency:	Wide Frequency Range for ESD and Surge Protection
Peak Pulse Power:	1600W
Peak Pulse Current:	80A
Reverse Leakage Current:	1.0uA
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Low Capacitance DFN1610-2L VCTU7V550F3S TVS Diode 7V Voltage Limiter Electronic Component Semiconductor

Mechanical Characteristics

1.Package: DFN1610-2 (1.6x1.0x0.5mm)

2.Case Material: "Green" Molding Compound.

3.UL Flammability Classification Rating 94V-0

4.Moisture Sensitivity: Level 3 per J-STD-020

5.Terminal Connections: See Diagram Below

Features

1.Ultra small package: 1.6x1.0x0.5mm

2.Protects one date or power line

3.Working voltage: 7V

4.2-pin leadless package
5.Complies with following standards:

- IEC 61000-4-2 (ESD) immunity test

Air discharge: ±30kV

Contact discharge: ±30kV

- IEC61000-4-5 (Lightning) 80A (8/20ns)

6.RoHS Compliant

Absolute Maximum Ratings (TA=25ºC, RH=45%-75%, unless otherwise noted

Parameter	Symbol	Value	Unit
Peak Pulse Power (tp=8/20μs waveform)	Pppp	1600	W
Peak Pulse Current (8/20µs)	lpp	80	A
ESD per l'EC 61000_4_2 (Air) ESD per l'EC 61000_4_2 (Contact)	VESD	±30 ±30	kV
Operating Temperature Range	TJ	_55 to +125	oC
Storage Temperature Range	Tstg	_55 to +150	oC

VCTU7V550F3S 1

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