Original manufacturer Integrated Circuit SOD-123FL Schottky Barrier Diode Vrrm 40V Vcds24wz If (AV) 2A
FEATURES
•Metal silicon junction, majority carrier conduction
•For surface mounted applications
•Low power loss, high efficiency
•High forward surge current capability
•For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
•Case: SOD-123FL
• Terminals: Solderable per MIL-STD-750, Method 2026
PINNING
| PIN | DESCRIPTION |
| 1 | Cathode |
| 2 | Anode |
Absolute Maximum Ratings and Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwise specified.Single phase, half wave, 60Hz resistive or inductive load, for capacitive load, derate by 20 %
| Parameter | Symbols | VCDS24WZ | Units |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 40 | V |
| Maximum RMS voltage | V RMS | 28 | V |
| Maximum DC Blocking Voltage | V DC | 40 | V |
| Maximum Average Forward Rectified Current | IF(AV) | 2.0 | A |
| Peak Forward Surge Current,8 .3ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method) |
IFSM | 50 |
A |
| Max Instantaneous Forward Voltage at 2 A | VF | 0.55 | V |
| Maximum DC Reverse Current at Rated DC Reverse Voltage | Ta = 25°C
Ta =100°C |
IR | 0.5
5 |
mA |
| Typical Junction Capacitance | Cj | 220 | pF |
| Typical Thermal Resistance( 2 ) | RθJA | 85 | °C/W |
| Operating Junction Temperature Range | Tj | -55 ~ +125 | °C |
| Storage Temperature Range | Tstg | -55 ~ +150 | °C |
